Abstract:Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×10 4 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm 2 V -1 s -1 to 1.1cm 2 V -1 s -1 . The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×10 5 .

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Fabrication and performance of indium oxide based transparent thin film transistors

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Fabrication And Characterization Of A-Igzo Thin Film Transistors On Smooth Printed Polyimide

Amorphous IZO-based transparent thin film transistors

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2