Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Vertical Oxide Homojunction TFTs of 0.8 V Gated by $ \hbox{h}_{3}\hbox{po}_{4}$ -Treated $\hbox{sio}_{2}$ Nanogranular Dielectric

Chitosan-Gated Low-Voltage Transparent Indium-Free Aluminum-Doped Zinc Oxide Thin-Film Transistors

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\Hbox{sio}_{2}$-Based Solid Electrolyte

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Amorphous IZO-based transparent thin film transistors

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors

Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors

Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Low-voltage Protonic/electronic Hybrid Indium Zinc Oxide Synaptic Transistors on Paper Substrates

One-Volt, Solution-Processed InZnO Thin-Film Transistors

Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by A Gradient Shadow Mask

Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte