Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Amorphous IZO-based transparent thin film transistors

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Chitosan-Gated Low-Voltage Transparent Indium-Free Aluminum-Doped Zinc Oxide Thin-Film Transistors

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by A Gradient Shadow Mask

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED