Abstract:Solution-driven metal-oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In2O3 semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In2O3/Al2O3 thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 degrees C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm(2) .V-1 . s(-1), a large ON/OFF current ratio of 10(6), a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of 1.97 x 10(12) cm(-2), respectively. To demonstrate the potential of In2O3/AlOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 5. Importantly, all these device parameters were obtained at an ultralow operating voltage of 2.5 V. As a result, it can be inferred that the water-induced In2O3 TFTs based on ALD-derived Al2O3 dielectrics have a potential application as a promising alternative for lowcost, low-power consumption, and large-area environmentally friendly oxide flexible electronics.

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$ -Covered Paper Substrates

Flexible ITO-Based TFTs on Paper Substrates

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Flexible Low-Voltage In–Zn–O Homojunction TFTs with Beeswax Gate Dielectric on Paper Substrates

Low-voltage Protonic/electronic Hybrid Indium Zinc Oxide Synaptic Transistors on Paper Substrates

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\Hbox{sio}_{2}$-Based Solid Electrolyte

Junctionless In-Plane-gate Transparent Thin-Film Transistors