Abstract:Fully solution-processed oxide thin-film transistors (TFTs) have shown a great potential in future printable electronics. However, high defect densities at the dielectric/channel interface have limited the simultaneous achievement of low operating voltage and high device performance. In this Letter, we study the effects of bilayer gate dielectrics in potential performance enhancement of solution-processed indium zinc oxide (IZO) TFTs. Several single and bilayer gate dielectrics are studied in terms of their physical and electrical properties. Compared with IZO TFTs using single-layer ZrOx gate dielectrics, optimized TFTs with ZrOx/AlOx gate dielectrics show an increase in carrier mobility and current on/off ratio by a factor of 3.5 and 27, respectively. The inner mechanisms of the performance enhancement are systematically studied, showing that the significantly improved TFT performance originates from the passivation effects of AlOx, which reduce the trap/defect states at the dielectric/channel interface by approximately an order of magnitude. With a low operating voltage of 2 V, a high mobility of over 10 cm(2)/V s, a subthreshold swing as low as 89 mV/dec, and a high current on/off ratio of >10(5), the reported devices might have a great potential in future low-cost, low-power printable electronics.

Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

Low-voltage Protonic/electronic Hybrid Indium Zinc Oxide Synaptic Transistors on Paper Substrates

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Flexible Low-Voltage In–Zn–O Homojunction TFTs with Beeswax Gate Dielectric on Paper Substrates

Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

Flexible ITO-Based TFTs on Paper Substrates

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Multifunctional Logic Demonstrated in a Flexible Multigate Oxide‐Based Electric‐Double‐Layer Transistor on Paper Substrate

Low-voltage, Solution-Processed InZnO Thin-Film Transistors with Enhanced Performance Achieved by Bilayer Gate Dielectrics

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/$\hbox{SiO}_{2}$ Electrolyte Dielectrics

Double In-Plane-gate IZO-based Thin-Film Transistors with Pea Protein Gate Dielectrics

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$ -Covered Paper Substrates