Abstract:Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Flexible ITO-Based TFTs on Paper Substrates

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Flexible Low-Voltage In–Zn–O Homojunction TFTs with Beeswax Gate Dielectric on Paper Substrates

Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

Multifunctional Logic Demonstrated in a Flexible Multigate Oxide‐Based Electric‐Double‐Layer Transistor on Paper Substrate

Flexible organic field-effect transistors on biodegradable cellulose paper with efficient reusable ion gel dielectrics

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Bilayer Metal Oxide Channel Thin Film Transistor With Flat Interface Based on Smooth Transparent Nanopaper Substrate

Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates

Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors

Low-voltage Protonic/electronic Hybrid Indium Zinc Oxide Synaptic Transistors on Paper Substrates

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

Highly Transparent and Flexible Nanopaper Transistors

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage