Abstract:We demonstrated flexible amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) on fully transparent and high-temperature polyimide-based nanocomposite substrates. The flexible nanocomposite substrates were coated on the carrier glass substrates and were debonded after the TFT microfabrication. The adoption of the Ti/IZO stacked electrodes as source/drain/gain electrodes significantly improved the etching compatibility with other material layers, enabling successful implementation of flexible a-IGZO TFTs onto the transparent nanocomposite substrates by conventional lithographic and etching processes. The flexible a-IGZO TFTs exhibited decent mobility and mechanical bending capability. Field-effect mobility of up to 15.9 $\hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$, a subthreshold swing of 0.4 V/dec, a threshold voltage of 0.8 V, and an on/off ratio of $>\hbox{10}^{8}$ were extracted from the TFT characteristics. The devices could be bent down to a radius of curvature of 3 mm and yet remained normally functional. Such successful demonstration of flexible oxide TFTs on transparent flexible substrates using fully lithographic and etching processes that are compatible with existing TFT fabrication technologies shall broaden their uses in flexible displays and electronics.

Flexible ITO-Based TFTs on Paper Substrates

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Flexible Low-Voltage In–Zn–O Homojunction TFTs with Beeswax Gate Dielectric on Paper Substrates

Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

Ionogel Infiltrated Paper As Flexible Electrode for Wearable All-Paper Based Sensors in Active and Passive Modes

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$ -Covered Paper Substrates

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Graphitic Carbon Nitride/Polyvinylpyrrolidone Composite Dielectric for Low-Voltage Flexible InZnO Thin Film Transistor Grown on a Polyethylene Terephthalate Substrate