Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Wei Dou,Jie Jiang,Jia Sun,Bin Zhou,Qing Wan

DOI: https://doi.org/10.1109/led.2012.2192712

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Low-voltage oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by stacked SiO2 electrolyte/chitosan proton-conductor hybrid dielectric have been fabricated on glass substrates at room temperature. Such EDL TFTs exhibit a saturation mobility (μsat) of 7.8 cm2 V-1 s-1, a subthreshold swing (S) of 100 mV/decade, a drain current on/off ratio (Ion/off) of 7.8 × 105, and a threshold voltage (Vth) of -0.48 V. After aging for one month in air ambient without surface passivation, such device shows μsat of 3.5 cm2 V-1 s-1, Ion/off of 1.2 × 105, and S of 120 mV/decade. Control experiments demonstrate that devices gated by stacked SiO2 electrolyte/chitosan hybrid dielectrics show improved stability compared with TFTs gated by single chitosan or single SiO2 electrolyte gate dielectric.