Abstract:Low operating voltages have been long desired for thin-film transistors (TFTs). However, it is still challenging to realise 1-V operation by using conventional dielectrics due to their low gate capacitances and low breakdown voltages. Recently, electric double layers (EDLs) have been regarded as a promising candidate for low-power electronics due to their high capacitance. In this work, we present the first sputtered SiO2 solid-state electrolyte. In order to demonstrate EDL behaviour, a sputtered 200 nm-thick SiO2 electrolyte was incorporated into InGaZnO TFTs as the gate dielectric. The devices exhibited an operating voltage of 1 V, a threshold voltage of 0.06 V, a subthreshold swing of 83 mV dec-1 and an on/off ratio higher than 105. The specific capacitance was 0.45 µF cm-2 at 20 Hz, which is around 26 times higher than the value obtained from thermally oxidised SiO2 films with the same thickness. Analysis of the microstructure and mass density of the sputtered SiO2 films under different deposition conditions indicates that such high capacitance might be attributed to mobile protons donated by atmospheric water. The InGaZnO TFTs with the optimised SiO2 electrolyte also showed good air stability. This work provides a new pathway to the realisation of high-yield low-power electronics.

Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Vertical Low-Voltage Oxide Transistors Gated by Microporous SiO2/LiCl Composite Solid Electrolyte with Enhanced Electric-Double-layer Capacitance

Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous Sio2-Based Solid Electrolyte

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Proton Conducting Sodium Alginate Electrolyte Laterally Coupled Low-Voltage Oxide-Based Transistors

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Ultralow-Voltage Transparent $\hbox{in}_{2} \hbox{o}_{3}$ Nanowire Electric-Double-Layer Transistors

Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature

Low-voltage Electric-Double-layer Paper Transistors Gated by Microporous SiO2 Processed at Room Temperature

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Realization of Artificial Synapse and Inverter Based on Oxide Electric-Double-layer Transistor Gated by a Chitosan Biopolymer Electrolyte

Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors

Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor.

Liquid-Gated Electric-Double-Layer Transistor On Layered Metal Dichalcogenide, Sns2

Vertical Oxide Homojunction TFTs of 0.8 V Gated by $ \hbox{h}_{3}\hbox{po}_{4}$ -Treated $\hbox{sio}_{2}$ Nanogranular Dielectric