Abstract:Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.

Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous Sio2-Based Solid Electrolyte

Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

Vertical Low-Voltage Oxide Transistors Gated by Microporous SiO2/LiCl Composite Solid Electrolyte with Enhanced Electric-Double-layer Capacitance

Erase Efficiency Improvement of Ferroelectric FET with IGZO Channel by P-Type SnOx Layer

A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors

Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Metal Oxide Transistors Via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Oxide Transistors: Metal Oxide Transistors Via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (adv. Funct. Mater. 34/2016)

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Full Control of Solid-State Electrolytes for Electrostatic Gating

Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature

Electrolyte-gate-driven carrier density modulation and metal–insulator transition in semiconducting epitaxial CdO films

Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Electrolyte Gate Controlled Metal-Insulator Transitions of the CaZrO3/SrTiO3 Heterointerface

Optimization of chitosan gated electric double layer transistors by combining nanoparticle incorporation and acid doping

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

The Electrical Property Modulation of Insulator in Metal–insulator–semiconductor–metal