Abstract:Conducting polymers is not the only way, inorganic oxides can make electrochemical transistors too. It is shown that ultrathin, flexible, ITO electrolyte‐gated transistors are designed for bioelectronics. These transistors demonstrate high transconductance, excellent on/off ratios, and mechanical flexibility. Via surface passivation strategies are used to enhance the electrochemical stability of ITO, making these devices promising candidates for future in vivo and in vitro bioelectronic applications. Electrolyte‐gated field effect transistors and electrochemical transistors have emerged as powerful components for bioelectronic sensors and biopotential recording devices. A set of parameters must be considered when developing devices to amplify weak electrophysiological signals. These include maximum transconductance values, cut‐off frequencies, and large on/off current ratios. Organic polymer‐based devices have recently dominated the field, especially when considering flexibility as a key factor. Oxide semiconductors may also offer these features, as well as advantages like higher mobility. Herein, flexible, ultrathin, indium tin oxide (ITO) electrolyte‐gated transistors are reported. These accumulation‐mode devices combine n‐type operation with μe = 9.5 cm2 Vs−1, high transconductance (gm = 44 mS), and on/off ratios (105) as well as optically transparent layouts. While oxides are normally considered brittle, mechanically flexible ITO layers are obtained by room temperature deposition of amorphous layers onto parylene C. This process results in low strain, producing devices that survive bending. ITO electrochemically degrades, however, with cycling. To overcome this, the surface is passivated with high dielectric constant inert capping layers of Ta2O5 or Ta2O5/AlN. This greatly improves stability while preserving low gate voltages. Based on their overall performance, ITO‐based EGFETs are promising for bioelectronics.

Oxide Transistors: Metal Oxide Transistors Via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (adv. Funct. Mater. 34/2016)

Metal Oxide Transistors Via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Metal Composition and Polyethylenimine Doping Capacity Effects on Semiconducting Metal Oxide-Polymer Blend Charge Transport.

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous Sio2-Based Solid Electrolyte

High-performance bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs

High-Performance Mo-Zn-O Oxide Transistors with Double Channels

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors