Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Enhancement-mode Thin Film Transistor Using Amorphous Phosphorus-Doped Indium–Zinc–Tin-Oxide Channel Layer

Dip-coated Al–In–Zn–O Thin-Film Transistor with Poly-Methylmethacrylate Gate Dielectric

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Organic Dielectric Indium Zinc Oxide Thin Film Transistors

Amorphous IZO-based transparent thin film transistors

Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors with Copper Source and Drain Electrodes

Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes

Preparation and Electrical Characteristics of Transparent Thin Film Transistors with Sputtered Aluminum and Phosphorus Co-Doped Indium-Zinc-oxide Channel Layer

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Amorphous indium–gallium–zinc–oxide thin-film transistors using organic–inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

Investigation on the Electrical Properties of Amorphous Indium-Zinc-Titanium-Aluminum Oxide Thin Film Transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

High Performance Thin Film Transistors With Sputtered In–Al–Zn–O Channel and Different Source/Drain Electrodes

Top-gate Zinc-Tin-oxide Thin-Film Transistors Based on Organic Gate Insulator

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Low-voltage, Solution-Processed InZnO Thin-Film Transistors with Enhanced Performance Achieved by Bilayer Gate Dielectrics

Achieving High Performance Thin Film Transistors Based on Gallium Doped Indium Zinc Tin Oxide

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Performances of Transparent Indium Zinc Oxide Thin Film Transistors Using ZrO2 As Dielectric Processed by Solution Method