Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Organic Dielectric Indium Zinc Oxide Thin Film Transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Study of zinc tin oxide thin-film transistor

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Amorphous IZO-based transparent thin film transistors

Amorphous indium–gallium–zinc–oxide thin-film transistors using organic–inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Dip-coated Al–In–Zn–O Thin-Film Transistor with Poly-Methylmethacrylate Gate Dielectric

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate