Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Oxygen incorporated solution-processed high-kappa La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films