Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate

Fully transparent flexible dual-layer channel Ga-doped ZnO thin-film transistors on plastic substrates

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

High-performance transparent AZO TFTs fabricated on glass substrate

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

High-Performamce Amorphous Ingazno Thin-Film Transistor with Zrlao Gate Dielectric Fabricated at Room Temperature

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature