Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate

dedong han,suoming zhang,feilong zhao,junchen dong,yingying cong,xin zhang,yi wang

DOI: https://doi.org/10.1016/j.tsf.2015.06.026

IF: 2.1

2015-01-01

Thin Solid Films

Abstract:High-performance transparent bottom-gate gallium-doped zinc-oxide thin-film transistors (GZO TFTs) have been fabricated on a glass substrate at a low temperature. All process temperatures were below 100°C. For VG=−5 to 10V, the TFTs exhibited excellent properties such as a saturation mobility μsat of 65.57cm2/(V·s), a linear field effect mobility μfe of 20.56cm2/(V·s), a threshold voltage Vth of 2.2V, a steep subthreshold swing of 166mV/decade, a low off-state current Ioff of 5×10−12A, a high on/off current ratio of 1.5×107, a small contact resistance between the active layer and the S/D electrode, and a high transmittance greater than 80%. These results demonstrate that excellent device performance can be realized in GZO TFTs.