Abstract:Fully-transparent Mo-doped ZnO (MZO) thin film transistors (TFTs) have been successfully fabricated on glass substrate by radio frequency Magnetron Sputtering at room temperature and its characteristics have been studied in different oxygen partial pressure. The results show that the MZO TFTs which were deposited at low oxygen partial pressure (10%) have excellent performance such as subthreshold swing of 388 mV/decade, the saturation mobility of 5.8 cm 2 /V·s, the threshold voltage of 3.97 V, the I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> value of 5×10 −12 A, and the on/off current ratio of 2.4×10 7 . To identify properties of the film formed at oxygen partial pressure of 10%, X-ray diffraction, scan electron microscopy, and transmittance were used to investigate the microstructure of the films. All conclusions suggest that MZO TFTs will become a promising candidate for TFT-LCD.

High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering

Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

High-performance transparent AZO TFTs fabricated on glass substrate

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

High-performance fully transparent Ti-Zn-O thin film transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Reactive Dc Magnetron Sputtering Deposited Znmgo Transparent Thin-Film Transistors

All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Fabrication of Bottom-Gate and Top-Gate Transparent ZnO Thin Film Transistors

High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature