Abstract:Aluminum-doped ZnO (AZO) has huge prospects in the field of conductive electrodes, due to its low price, high transparency, and pro-environment. However, enhancing the conductivity of AZO and realizing ohmic contact between the semiconductor and AZO source/drain (S/D) electrodes without thermal annealing remains a challenge. Here, an approach called pulsed laser deposition (PLD) is reported to improve the comprehensive quality of AZO films due to the high energy of the laser and non-existence of the ion damage. The 80-nm-thick AZO S/D electrodes show remarkable optical properties (transparency: 90.43%, optical band gap: 3.42 eV), good electrical properties (resistivity: 16 × 10−4 Ω·cm, hall mobility: 3.47 cm2/V·s, carrier concentration: 9.77 × 1020 cm−3), and superior surface roughness (Rq = 1.15 nm with scanning area of 5 × 5 μm2). More significantly, their corresponding thin film transistor (TFT) with low contact resistance (RSD = 0.3 MΩ) exhibits excellent performance with a saturation mobility (µsat) of 8.59 cm2/V·s, an Ion/Ioff ratio of 4.13 × 106, a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. Furthermore, the average transparency of the unpatterned multi-films composing this transparent TFT can reach 78.5%. The fabrication of this TFT can be suitably transferred to transparent arrays or flexible substrates, which is in line with the trend of display development.

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature

Fully transparent flexible dual-layer channel Ga-doped ZnO thin-film transistors on plastic substrates

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

High-performance transparent AZO TFTs fabricated on glass substrate

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

48.2: Invited Paper: High Conductivity & Transparent Aluminum‐based Multi‐layer Source/drain Electrodes for Thin Film Transistors

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Highly Conductive and Transparent AZO Films Fabricated by PLD As Source/Drain Electrodes for TFTs

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process