Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature
Lingling Huang,Dedong Han,Zhuofa Chen,Yingying Cong,Jing Wu,Nannan Zhao,Junchen Dong,Feilong Zhao,Lifeng Liu,Shengdong Zhang,Xing Zhang,Yi Wang
DOI: https://doi.org/10.7567/JJAP.54.04DJ07
IF: 1.5
2015-01-01
Japanese Journal of Applied Physics
Abstract:High-performance nickel (Ni)-doped zinc oxide thin-film transistors (NZO TFTs) have been successfully fabricated on transparent flexible plastic substrates at a low temperature. The effect of different oxygen partial pressures during channel deposition on the electrical properties of NZO TFTs was studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant influence on the performance of NZO TFTs. Finally, it was demonstrated that a NZO film with 100% Ar sputtering gas during channel deposition exhibited the best electrical properties, with a drain current on/off ratio of 10(8), a positive threshold voltage of 2.59 V, a subthreshold swing of 233 mV/decade, and a saturation mobility of 118.9 cm(2).V-1.s(-1). The results show that Ni-doped ZnO is a promising candidate for flexible fully transparent displays. (C) 2015 The Japan Society of Applied Physics