Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as ‘double cycles’), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio $(I_{\mathrm{ on}} / I_{\mathrm{ off}}$ ) of 106, an increased field-effect mobility ( $\mu $ ) of 6.5 cm2/Vs, a lower threshold voltage $(V_{\mathrm{ th}})$ of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of ‘double cycles’ in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

Fabrication Of High Performance Gadolinium-Aluminum-Zinc-Oxide Thin Film Transistors

High Negative Bias Stability Gadolinium-doped Aluminum-Zinc-Oxide Thin Film Transistors

Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate

Semiconductor performance of rare earth gadolinium-doped aluminum–zinc oxide thin film

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

High-performance transparent AZO TFTs fabricated on glass substrate

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-performance fully transparent Ti-Zn-O thin film transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering

Highly Conductive and Transparent AZO Films Fabricated by PLD As Source/Drain Electrodes for TFTs

High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In2O3 channel layers

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition