Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

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Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

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Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

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Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

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Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

Oxygen incorporated solution-processed high-kappa La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Solution processed zirconium oxide dielectric thin films for electronic applications

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

Combustion-assisted low-temperature ZrO 2 /SnO 2 films for high-performance flexible thin film transistors

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure