Abstract:Polymer dielectric materials with hydroxyl functionalities such as poly(4-vinylphenol) and poly(vinyl alcohol) have been utilized widely in organic thin-film transistors (OTFTs) because of their excellent insulating performance gained by hydroxyl-mediated cross-linking. However, the polar hydroxyl functionality also deleteriously affects the performance of OTFTs and significantly impairs the device stability. In this study, a sub-20 nm, high-k copolymer dielectric with hydroxyl functionality, poly(2-hydroxyethyl acrylate-co-di(ethylene glycol) divinyl ether), was synthesized in the vapor phase via initiated chemical vapor deposition. The inherently dry environment offered by the vapor-phase polymer synthesis prompted the snuggling of polar hydroxyl functionalities into the bulk polymer film to form a molecular thin hydrophobic skin layer at its surface, verified by near-edge X-ray absorption fine structure analysis. The chemical composition of the copolymer dielectric was optimized systematically to achieve high dielectric constant (k ≈ 6.2) as well as extremely low leakage current densities (less than 3 × 10-8 A/cm2 in the range of ±2 MV/cm) even with sub-20 nm thickness, leading to one of the highest capacitance (higher than 300 nF/cm2) achieved by a single polymer dielectric to date. Exploiting the structural advantage of the cross-linked high-k polymer dielectric, high-performance OTFTs were obtained. Notably, the spontaneously formed molecular thin, hydrophobic skin layer in the copolymer film substantially suppressed the hysteresis in the transistor operation. The trap analysis also suggested the formation of bulk trap with a high energy barrier and sufficiently low trap densities at the semiconductor/dielectric interface, owing to the surface skin layer. Furthermore, the OTFTs with the -OH-containing copolymer dielectric showed an unprecedentedly excellent operational stability. No apparent OTFT degradation was observed up to 50 000 s of high constant voltage stress (corresponding to the applied electric field of 1.4 MV/cm) because of the markedly suppressed interfacial trap density by the hydrophobic skin layer, together with the current compensation by the bulk hydroxyl functionalities. We believe that the surface modification-free, one-step polymer dielectric synthetic strategy will provide a new insight into the design of polymer dielectric materials for high-performance, low-power soft electronic devices with high operational stability.

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Low-temperature Solution-Processed Alumina Dielectric Films for Low-Voltage Organic Thin Film Transistors

Low-Temperature Solution-Processed High-K Zrtiox Dielectric Films for High-Performance Organic Thin Film Transistors

A Low-Temperature Solution-Process High-k Dielectric for High-Performance Flexible Organic Field-Effect Transistors

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

Towards Low-Voltage Organic Thin Film Transistors (otfts) with Solution-Processed High-K Dielectric and Interface Engineering

Low-voltage-operation of Flexible Organic C8-BTBT Thin-Film Transistors with a Reactively Sputtered AlOx Gate Dielectric

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors.

High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors with Low- $k$ /High- $k$ Bilayer Gate Dielectric

Sol-gel Processed High-K Aluminum Oxide Dielectric Films for Fully Solution-Processed Low-Voltage Thin-Film Transistors

Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Solution-Processable Barium Titanate and Strontium Titanate Nanoparticle Dielectrics for Low-Voltage Organic Thin-Film Transistors

Low-temperature Solution-Processed Alumina As Gate Dielectric for Reducing the Operating-Voltage of Organic Field-Effect Transistors

Low-voltage operated organic thin film transistors and integrated devices with photo-cured and patterned siloxane based organic–inorganic hybrid high-k dielectrics

Low-Voltage Organic Thin-Film Transistors with Solution-Processed Hafnium Oxide and Polymer Dielectrics

Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High- k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation

Low-Voltage Organic Thin-Film Transistors Based on Solution-Processed Hybrid Dielectrics: Theoretical and Experimental Studies