Low Temperature Cross-Linked, High Performance Polymer Gate Dielectrics for Solution-Processed Organic Field-Effect Transistors

Shengxia Li,Linrun Feng,Jiaqing Zhao,Xiaojun Guo,Qing Zhang

DOI: https://doi.org/10.1039/c5py00757g

IF: 4.6

2015-01-01

Polymer Chemistry

Abstract:Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

What problem does this paper attempt to address?

A Facile Photo-cross-linking Method for Polymer Gate Dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

Ying Liu,Jia-Qing Zhao,Wen-Jian Sun,Yu-Kun Huang,Su-Jie Chen,Xiao-Jun Guo,Qing Zhang

DOI: https://doi.org/10.1007/s10118-018-2110-2

2018-01-01

Chinese Journal of Polymer Science

Abstract:A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics.Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided.The photo-cross-linker,BBP-4,was added into host polymers by simple solution blending process,which was capable of abstracting hydrogen atoms from polymers containing active C―H groups upon exposure to ultraviolet(UV) radiation.The cross-linking can be completed with a relatively long wavelength UV light(365 nm).The approach has been applied to methacrylate and styrenic polymers such as commercial poly(methylmethacrylate)(PMMA),poly(iso-butylmethacrylate)(Pi BMA) and poly(4-methylstyrene)(PMS).The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films.The bottom-gate organic field-effect transistors(OFETs) through all solution processes on plastic substrate were fabricated.The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.
Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

P Liu,YL Wu,YN Li,BS Ong,SP Zhu

DOI: https://doi.org/10.1021/ja060620l

IF: 15

2006-01-01

Journal of the American Chemical Society

Abstract:A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated.
Thiol-Ene Cross-Linked Polymer Gate Dielectrics For Low-Voltage Organic Thin-Film Transistors

Chao Wang,Wen-Ya Lee,Reina Nakajima,Jianguo Mei,Do Hwan Kim,Zhenan Bao

IF: 10.508

2013-01-01

Chemistry of Materials

Abstract:We report a low-temperature processed, hydroxyl-free poly(vinyl phenyl) (PVP) dielectric layer cross-linked using thiol-ene chemistry. This new dielectric material exhibited a high dielectric constant as compared to conventional hydroxyl-free polymer dielectrics, e.g. polystyrene, and allowed for cross-linking at 80 degrees C, which is lower than the glass transition temperature of most commonly used plastic substrates, e.g. poly(ethylene terathalate) (PET). Due to the absence of hydroxyl groups, the dielectric layer displayed more stable performance than other previously reported cross-linked PVP dielectrics. The low-temperature processing, high air stability, and low current-voltage hysteresis while retaining high device performances are important advantages of this new dielectric material.
Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Jupeng Cao,Xiaoyun Wei,Yuxuan Che,Aiyuan Li,Yaowu He,Chao He,Yanan Zhu,Xiaolong Chen,Tingting Li,Imran Murtaza,Lijia Yan,Dmitrii F. Perepichka,Hong Meng

DOI: https://doi.org/10.1039/c9tc00717b

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:The gate dielectric layer is one of the important components in organic thin film transistors (OTFTs) which affects the charge mobility, power consumption and stability of the device. Here, we report new composite polymer dielectrics prepared by sol-gel chemistry from commercial siloxanes and poly(vinyl alcohol), featuring a high dielectric constant (k similar to 8-16) and hydrophobicity. OTFTs fabricated with the developed polymer dielectric exhibit ultra-low driving voltage (< 3 V), extremely high charge mobility (up to 6 cm(2) V-1 s(-1) for pentacene and up to 50 cm(2) V-1 s(-1) C8-BTBT), negligible hysteresis and excellent operational stability. This is an important step towards the practical realization of low-cost p-type OTFTs.
Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Jaekyun Kim,Chang Jun Park,Gyeongmin Yi,Myung-Seok Choi,Sung Kyu Park

DOI: https://doi.org/10.3390/ma8105352

2015-10-12

Abstract:A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm²/Vs saturation mobility) and low-operation-voltage (<5 V) diketopyrrolopyrrole (DPP)-based OTFTs on an ultra-thin polyimide film (3-μm thick). Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.
Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Xiaoli Xu,Linrun Feng,Shasha He,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1109/led.2012.2210853

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Bottom-gate top-contact zinc oxide (ZnO) thin-film transistors were fabricated with a low annealing temperature (150 °C) using ammine-hydroxo zinc precursors. The unpassivated devices present profound hysteresis in the measured current-voltage characteristics and a negative output conductance, which were attributed to the interaction of back surface with the oxygen molecules in the ambient atmosphere. To suppress the ambient influence without impacting the device's intrinsic performance, a simple low-temperature (75 °C ) solution-based passivation approach with polydimethylsiloxane was developed. The passivated devices present typical field-effect transistor behaviors of greatly improved device performance.
Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Linrun Feng,Jose V. Anguita,Wei Tang,Jiaqing Zhao,Xiaojun Guo,S. Ravi P. Silva

DOI: https://doi.org/10.1002/aelm.201500374

IF: 6.2

2016-01-01

Advanced Electronic Materials

Abstract:Room temperature plasma-enhanced chemical vapor deposited (PECVD) polymer-like carbon (PLC) dielectric with outstanding surface and electrical characteristics is used as the gate dielectric in organic thin-film transistors. The devices show state-of-the-art overall electrical performance on glass and flexible substrates.
Recent advancements in achieving high dielectric constant polymer dielectrics for low-power-consumption organic field-effect transistors

Yang Li,Mingqian He

DOI: https://doi.org/10.1557/s43579-024-00538-3

2024-03-19

MRS Communications

Abstract:While efforts have been made to optimize organic semiconducting materials to achieve low-power-consumption organic field-effect transistors (OFETs), it is important to note that the choice of gate dielectric materials is equally critical. In general, a high-k polymer dielectric material is highly preferred for low-power-consumption OFETs. In this perspective, we highlight several newly emerged strategies for high dielectric constant polymer dielectrics. By exploiting the recent advances in molecular modulation and morphology control, these new strategies enable remarkably high dielectric constant up to 25–30 for polymer dielectrics, while still maintaining dielectric losses below 0.01 at 1 kHz. We further analyze the advantages and disadvantages of these strategies and propose four design principles—side-chain dipole, rigid free volume, self-assembly, and thermosets—for future polymer gate dielectrics in OFETs.

materials science, multidisciplinary
Fröhlich polaron effect in flexible low-voltage organic thin-film transistors gated with high-k polymer dielectrics

Songyang Guo,Siying Li,Tao Shen,Wei Tang,Xiaojun Guo,Juan Xin,Junjun Jin,Huili Wei,Xianbao Wang,Jinhua Li

DOI: https://doi.org/10.1088/1361-6463/ac19e2

2021-08-13

Abstract:The dielectric constant of the polymer insulator layer plays a key role in the charge transport and operation voltage of organic thin-film transistors (OTFT). However, the appropriate effects have not been well distinguished yet in donor-acceptor copolymer semiconductor-based OTFT. In this work, we demonstrate that the decreased mobilities in indacenodithiophene-co-benzothiadiazole OTFTs with the increase of gate dielectric constant is due to the Fröhlich polaron effect, especially for device gated with high-k relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene). In order to eliminate this effect, a low-k polymer is introduced as a modification layer to construct a low-k/high-k bilayer dielectric to attain better mobility and improved bias stability. Finally, flexible top-gate OTFT is demonstrated on the polyethylene terephthalate substrate, showing good bending stability even after 1000 bending tests.
Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Xiong Chen,Yu Zhang,Xiangfeng Guan,Hao Zhang

DOI: https://doi.org/10.3390/nano10040806

2020-04-23

Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.
Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

Young-geun Ha,Sunho Jeong,Jinsong Wu,Myung-Gil Kim,Vinayak P. Dravid,Antonio Facchetti,Tobin J. Marks

DOI: https://doi.org/10.1021/ja107079d

IF: 15

2010-01-01

Journal of the American Chemical Society

Abstract:We report here on the design, synthesis, processing, and dielectric properties of novel cross-linked inorganic/organic hybrid blend (CHB) dielectric films which enable low-voltage organic thin-film transistor (OTFT) operation. CHB thin films (20-43 nm thick) are readily fabricated by spin-coating a zirconium chloride precursor plus an α,ω-disilylalkane cross-linker solution in ambient conditions, followed by curing at low temperatures (~150 °C). The very smooth CHB dielectrics exhibit excellent insulating properties (leakage current densities ~10(-7) A/cm(2)), tunable capacitance (95-365 nF/cm(2)), and high dielectric constants (5.0-10.2). OTFTs fabricated with pentacene as the organic semiconductor function well at low voltages (<-4.0 V). The morphologies and microstructures of representative semiconductor films grown on CHB dielectrics prepared with incrementally varied compositions and processing conditions are investigated and shown to correlate closely with the OTFT response.
Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Xiaoli Xu,Qingyu Cui,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1063/1.4769091

IF: 4

2012-01-01

Applied Physics Letters

Abstract:In this letter, solution processed low voltage (<3 V) zinc oxide (ZnO) thin-film transistors with the maximum process temperature not exceeding 150 °C were achieved. In the devices, an ultra-thin zirconium oxide layer was formed as the gate dielectric via ultraviolet irradiation assisted sol-gel processes, and the ZnO channel was processed from an aqueous precursor of ammine-hydroxo zinc complex. The devices can be operated under a voltage of 3 V, and show decent device performance with the field effect mobility of 0.45 cm2/V · s and an ON/OFF current ratio of 105.
Thermally cross-linked polyvinyl alcohol as gate dielectrics for solution processing organic field-effect transistors

Wenjian Sun,Jiaqing Zhao,Sujie Chen,Xiaojun Guo,Qing Zhang

DOI: https://doi.org/10.1016/j.synthmet.2019.03.003

IF: 4

2019-01-01

Synthetic Metals

Abstract:•Poly(vinyl alcohol) (PVA) dielectric films were cross-linked with N,N’-methylene bisacrylamide (MBA) at 100 ℃.•Cross-link significantly improved the dielectric properties of the thin-films.•Surface passivation with a cross-linked PMMA film reduced surface hydrophilicity of PVA dielectrics.•Average mobility of 0.43 cm2V−1s−1 were achieved in solution processed OFET devices with TIPS-pentacene as active layer.
Low-voltage organic single-crystal field-effect transistors and inverters enabled by a solution processable high- k dielectric

Chunli Ma,Bin Li,Yihan Zhang,Jiamin Wang,Ying Liu,Lingjie Sun,Xinzi Tian,Jiarong Yao,Zhaofeng Wang,Shuyu Li,Fangxu Yang,Rongjin Li,Wenping Hu

DOI: https://doi.org/10.1039/d3tc00246b

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:Low-voltage OFETs with excellent mobility, steep subthreshold swing, and low operating voltage were achieved simultaneously based on a novel solution-processable high- k dielectric.

materials science, multidisciplinary,physics, applied
Constrain Effect of Charge Traps in Organic Field-Effect Transistors with Ferroelectric Polymer as a Dielectric Interfacial Layer

Yangjiang Wu,Zhihui Wang,Longfei Yang,Yanjun Qiao,Dongdong Chang,Yongkun Yan,Zeng Wu,Zhijun Hu,Jichao Zhang,Xuefeng Lu,Yan Zhao,Yunqi Liu

DOI: https://doi.org/10.1021/acsami.1c20672

2022-01-05

Abstract:Traps play crucial roles in the charge transport of disordered organic semiconductors and can significantly influence the electrical performance of organic functional devices. The constrain effect of charge traps in organic field-effect transistors with a ferroelectric polymer as a dielectric interfacial layer has been studied at temperatures ranging from 30 °C to temperature beyond the Curie point of the ferroelectric polymers by utilizing a thermally stable polymer as the semiconducting channel. It has been observed that the charge traps are constrained within a shallow energy level with the ferroelectric interfacial layer. The change in the density of traps involved in the trap-filling process at temperatures across the Curie point shows that the decrease in shallow traps is almost proportional to the increase in deep traps, indicating the transition between shallow and deep traps in the semiconducting channel. These findings suggest potential in stability increase and performance enhancement of future organic functional devices via modulation of traps by a ferroelectric interfacial layer.

materials science, multidisciplinary,nanoscience & nanotechnology
Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

Yanfen Gong,Kai Zhao,Huixin He,Wei Cai,Naiwei Tang,Honglong Ning,Sujuan Wu,Jinwei Gao,Guofu Zhou,Xubing Lu,J-M Liu

DOI: https://doi.org/10.1088/1361-6463/aaac1b

2018-01-01

Abstract:Low temperature fabrication of high quality dielectric films for high performance flexible electronics is still a big challenge. In this work, we realized low temperature fabrication of high quality amorphous ZrO2 dielectric films via a low-cost solution process. The microstructure and electrical properties, as well as the electronic structures of solution processed ZrO2 films have been investigated systematically. The ZrO2 films with 160 °C annealed showed a low leakage current (3.6 × 10−5 A cm−2 at −3 V) and a high band gap (5.4 eV). The flexible organic thin film transistor (OTFT) made by using the solution-processed amorphous ZrO2 dielectric shows a low operation voltage of 4 V and a high drain current on/off ratio of 2.4 × 105. The frequency response of the ZrO2-OTFT device is up to 51.8 KHz under a low gate voltage of −3 V. Our work demonstrated that a solution processable ZrO2 film is promising for applications in future low power consumption and wearable flexible electronic devices.
Binary Polymer Composite Dielectrics for Flexible Low-Voltage Organic Field-Effect Transistors

Ziyang Liu,Zhigang Yin,Shan-Ci Chen,Shilei Dai,Jia Huang,Qingdong Zheng

DOI: https://doi.org/10.1016/j.orgel.2017.11.039

IF: 3.868

2018-01-01

Organic Electronics

Abstract:Insulating polymers have been recognized as a promising class of gate dielectrics for organic field-effect transistors (OFETs). However, the relative permittivity of most single polymer dielectrics is quite fixed and too low to afford low-operating voltages of OFETs. For flexible low-voltage OFETs, dielectric tunable polymer composites are highly desirable. Here, a new type of binary polymer composite dielectrics is developed by incorporating a small amount of polyacrylic acid (PAA) into poly(methyl methacrylate) (PMMA) to reduce the operating voltage and enhance the device performance. The resulting dielectric layers deliver a tunable relative permittivity from 3.32 to 4.28 with an increase of PAA contents in the composite. As results, flexible OFETs using PMMA: PAA dielectrics show greatly improved mobility and reduced threshold voltages with a low-operating voltage below -5 V. The OFETs using the composite dielectric also exhibit excellent performance stability during mechanical bending tests with different radii, where the mobility can maintain 95% of its initial value over 5000 cycles under a bending radius of 5 mm. The tunable dielectric properties and high robustness of these novel dielectrics make them promising candidates for solution-processed low-voltage flexible OFETs with low power consumption.
Low temperature UV cross-linked fluorinated polyurethane for organic thin film transistors

Ruixia Duan,Sixu Liu,Xuying Liu,Miaoming Huang,Suqin He,Hao Liu,Wentao Liu,Chengshen Zhu

DOI: https://doi.org/10.1039/d4tc00295d

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:A FPU dielectric can be cured quickly at low temperature by UV cross-linking, for use in flexible devices; it is suitable for large-area preparation by a solution method and has good solvent resistance. OTFTs with FPU perform better than those with a PU dielectric.

materials science, multidisciplinary,physics, applied
Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Jeong-Wan Jo,Jingu Kang,Kyung-Tae Kim,Seung-Han Kang,Jae-Cheol Shin,Seung Beom Shin,Yong-Hoon Kim,Sung Kyu Park

DOI: https://doi.org/10.3390/ma13235571

IF: 3.4

2020-12-07

Materials

Abstract:The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3) thin films for high-performance OTFTs. Nanocluster-based Al2O3 films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al2O3 films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al2O3 dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al2O3 films exhibit a low leakage current density ( 6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Fuchao He,Yifei Wang,Zhenhua Lin,Jie Su,Jincheng Zhang,Jingjing Chang,Yue Hao

DOI: https://doi.org/10.1063/5.0057806

IF: 4

2021-09-13

Applied Physics Letters

Abstract:Different to conventional high-κ gate dielectric fabrication that usually generates porosity and pinhole sites when evaporating solvents or impurities in the thin-film formation process, herein, we report a simple aqueous route to deposit aluminum-gallium-oxide (AGO) alloy gate dielectrics. Compared to GaOx dielectric, higher performance and aqueous solution-processed low voltage fully oxide thin film transistors (TFTs) are achieved based on the AGO dielectric films. The solution-processed IZO(300 °C)/AGO TFT with optimal performance shows a good charge carrier saturation mobility of 55.4 cm2 V−1 s−1, an on/off current ratio of ∼104, threshold voltage of 0.1 V, and a low operation voltage of 5 V. Our study represents a significant step toward the development of low-cost, easy-control, and large-area oxide electronics.

physics, applied

Low Temperature Cross-Linked, High Performance Polymer Gate Dielectrics for Solution-Processed Organic Field-Effect Transistors

A Facile Photo-cross-linking Method for Polymer Gate Dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Thiol-Ene Cross-Linked Polymer Gate Dielectrics For Low-Voltage Organic Thin-Film Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Recent advancements in achieving high dielectric constant polymer dielectrics for low-power-consumption organic field-effect transistors

Fröhlich polaron effect in flexible low-voltage organic thin-film transistors gated with high-k polymer dielectrics

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Thermally cross-linked polyvinyl alcohol as gate dielectrics for solution processing organic field-effect transistors

Low-voltage organic single-crystal field-effect transistors and inverters enabled by a solution processable high- k dielectric

Constrain Effect of Charge Traps in Organic Field-Effect Transistors with Ferroelectric Polymer as a Dielectric Interfacial Layer

Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

Binary Polymer Composite Dielectrics for Flexible Low-Voltage Organic Field-Effect Transistors

Low temperature UV cross-linked fluorinated polyurethane for organic thin film transistors

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors