Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Low Temperature Cross-Linked, High Performance Polymer Gate Dielectrics for Solution-Processed Organic Field-Effect Transistors

Polyimide-based Gate Dielectrics for High-Performance Organic Thin Film Transistors

Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric

A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

Organic thin-film transistors with polymeric gate insulators

Development of High-k Polymer Materials for Use As a Dielectric Layer in the Organic Thin-Film Transistors

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Organic Thin-Film Transistors with High Mobilities and Low Operating Voltages Based on 5,5′-Bis-biphenyl-dithieno[3,2-b:2′,3′-D]thiophene Semiconductor and Polymer Gate Dielectric

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

N2O-plasma Effect on Low-Temperature Deposited Gate Dielectric for Organic Thin-Film Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Polymer single crystal dielectrics for organic field-effect transistors

Polymer Thin-Film Transistor Based on a High Dielectric Constant Gate Insulator

High-k Polymer Materials Containing Cyclic Carbonate As Gate Dielectrics for Application in Low-Voltage Operating Organic Thin-Film Transistors

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

Polymer Gate Dielectrics with Self-Assembled Monolayers for High-Mobility Organic Thin-Film Transistors Based on Copper Phthalocyanine

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications