Abstract:We report on systematic mobility enhancements in electrolyte-gated organic field-effect transistors (OFETs) by thinning down the active layer and exploiting polymer solid-state electrolyte gate insulators (SEGIs). The SEGI is composed of homogeneous poly(vinylidene fluoride- co-hexafluoropropylene) [P(VDF-HFP)] polymer solution-ion gel blends of high areal capacitance of >10 μF cm-2 at 1 Hz. By scaling up the poly(3-hexylthiophene) (P3HT) semiconducting layer by 1 order of magnitude (5-50 nm), an ultraviolet photoelectron spectroscopy examination reveals a downward vacuum-level shift generating a substantial hole injection barrier that originates from different interfacial dipole layer formations. The ultrathin (5.1 nm) P3HT FETs outperformed the other devices, exhibiting stable device characteristics with a highest field-effect mobility of >2 cm2 V-1 s-1 (effective mobility of 0.83 ± 0.05 cm2 V-1 s-1), on/off ratio of ∼106, low threshold voltage of <-0.6 V, and low gate-leakage current levels of ∼105 below the on-current levels in 10 μm channel length devices. We observed a positive threshold voltage shift in the P3HT/SEGI FETs with decreasing semiconductor thickness. The aforementioned mobility is at least 10 times greater than that of neat P(VDF-HFP) devices. The significant FET performance is attributed to a better insulator/semiconductor interface, efficient hole injection from the Au electrode resulting in a low contact resistance of <500 Ω cm, and boosted charge-carrier densities in the transistor channel. This work demonstrates an excellent approach for carrier mobility enhancement and reliability assessment in low-voltage-operated electrolyte-gated OFETs.

Polymer Gate Dielectrics with Self-Assembled Monolayers for High-Mobility Organic Thin-Film Transistors Based on Copper Phthalocyanine

Organic thin-film transistors with polymeric gate insulators

Organic Thin-Film Transistors with High Mobilities and Low Operating Voltages Based on 5,5′-Bis-biphenyl-dithieno[3,2-b:2′,3′-D]thiophene Semiconductor and Polymer Gate Dielectric

Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric

Langmuir–Blogett Monolayer Transistors of Copper Phthalocyanine

High Mobility Polymer Thin-Film Transistors

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Low-Voltage Organic Field-Effect Transistors (ofets) with Solution-Processed Metal-Oxide As Gate Dielectric

UV-directly Patternable Organic–inorganic Hybrid Composite Dielectrics for Organic Thin-Film Transistors

Highly Conductive Ultrathin Layers of Conjugated Polymers for Metal-Free Coplanar Transistors with Single-Polymer Transport Layers

Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Pentacene Filed-Effect Transistors Using a Polyimide Gate Dielectric Layer

Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability

Organic Thin-Film Transistors with Poly(Methyl Silsesquioxane) Modified Dielectric Interfaces

Deposition-Pressure-Induced Optimization of Molecular Packing for High-Performance Organic Thin-Film Transistors Based on Copper Phthalocyanine

Organic Field-Effect Transistors with Cross-Linked High-K Cyanoethylated Pullulan Polymer As a Gate Insulator

Phthalocyanine Composites as High-Mobility Semiconductors for Organic Thin-Film Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Excellent Carrier Mobility of 0.24 Cm2/vs in Regioregular Poly(3-Hexylthiophene) Based Field-Effect Transistor by Employing Octadecyltrimethoxysilane Treated Gate Insulator

Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors Via Hydroxylation and Subsequent Monolayer Self-Assembly.

Control of Polymorphism in Solution-Processed Organic Thin Film Transistors by Self-Assembled Monolayers