Organic Thin-Film Transistors with Poly(Methyl Silsesquioxane) Modified Dielectric Interfaces

Yiliang Wu,Ping Liu,Beng S. Ong
DOI: https://doi.org/10.1063/1.2219143
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Poly(methyl silsesquioxane) modification of SiO2 gate dielectric surface leads to significantly improved performance of polythiophene-based organic thin-film transistors. The beneficial effects of this surface modification on transistor performance are often significantly greater than those of other silane self-assembled monolayers (SAMs). This polymer modification approach can also be applied to solution-processed dielectric surfaces where the growth of silane SAMs is difficult, thus enabling fabrication of flexible organic thin-film transistor circuits on plastic substrates.
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