Abstract:It is well-known that the improvement in the performance of organic field-effect transistors (OFETs) relies primarily on growth properties of organic molecules on gate dielectrics, their interface behavior, and on understanding the physical processes occurring during device operation. In this work, the relation of varying the dielectric materials in an n-type OFET device based on 1,7-dibromo-N,N'-dioctadecyl-3,4,9,10-perylenetetracarboxylic diimide (Br2PTCDI-C18) molecule on a low-cost glass substrate at different channel lengths is reported, which is conceptually very important and fundamental in the context of device performance. Anodized alumina (Al2O3) along with dielectric films of polyvinyl alcohol (PVA) or polymethylmethacrylate (PMMA) was used to fabricate the devices and study their influence on various transistor properties. In addition, the effects of a thin hexamethyldisilazane (HMDS) layer on the performance of OFETs including their contact resistances were studied with the channel length variations. The devices with PVA dielectric material exhibited the maximum mobility values of 0.012-0.025 cm2 V-1 s-1 irrespective of varying channel lengths from 25 to 190 μm. The bias-stress measurements were recorded to realize the effects of the channel length and HMDS layer on the stability of the devices. The on/off ratios and electrical stabilities of these devices were enhanced significantly by modifying the surface of the PVA dielectric layer using a thin layer of HMDS. Similarly, in the case of PMMA dielectric layer, a drastic enhancement in the on/off ratio and bias-stress stability was observed. Characterization of all devices at different channel lengths using different dielectric materials permitted us to identify the effects of contact resistance on OFET devices. The stability of the devices in relation to the bias-stress measurements of devices by varying channel lengths and surface modification was systematically investigated. A careful analysis of oxide gate dielectrics modified with polymer-based dielectric materials, contact resistance, influence of thin HMDS layer on the electrical properties, and other parameters on top-contact bottom-gated configured n-type OFET devices is presented herein.

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Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

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Low Temperature Cross-Linked, High Performance Polymer Gate Dielectrics for Solution-Processed Organic Field-Effect Transistors

Solvent-Free Processable and Photo-Patternable Hybrid Gate Dielectric for Flexible Top-Gate Organic Field-Effect Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Correlation between dielectric/organic interface properties and key electrical parameters in PPV-based OFETs.

Binary Polymer Composite Dielectrics for Flexible Low-Voltage Organic Field-Effect Transistors

Polymer single crystal dielectrics for organic field-effect transistors

Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors

Pentacene Organic Ferroelectric Transistors with [P(vdf-Trfe)] Gate by Langmuir-Blodgett Process

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Environmentally friendly, flexible and high performance PVA dielectric layer fabricated by solution method and its application in IGZO-TFT

Polyethylene interfacial dielectric layer for organic semiconductor single crystal based field-effect transistors

Methyl Functionalization on Polyimide Side Chains as Gate Dielectrics for Organic Transistors

High-mobility flexible pentacene-based organic field-effect transistors with PMMA/PVP double gate insulator layers and the investigation on their mechanical flexibility and thermal stability