Abstract:Future flexible electronic systems require memory devices combining low power consumption and mechanical bendability. However, high programming/erasing (P/E) voltages, which are universally required to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a novel route to achieve a low-voltage programmable/erasable flexible Fe-OFET NVM. Ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [(VDF-TrFE-CTFE)], rather than the conventional ferroelectric copolymer poly(vinylidene-fluoride-trifluoroethylene) [(VDF-TrFE)], is used as the gate dielectric. The low coercive field of P(VDF-TrFE-CTFE) is the main contribution to the low-voltage operation in the Fe-OFET NVM, even with a relative thick ferroelectric gate dielectric layer. By depositing a long-chain alkane molecule Tetratetracontane (TTC) as the passivation layer on the surface of P(VDF-TrFE-CTFE) film, the layer-by-layer growth mode of semiconductor pentacene is obtained, which results in a large crystalline grain and good interface morphology at the channel/dielectric. Therefore, the mobility of Fe-OFET NVMs is greatly improved. As a result, a high performance flexible Fe-OFET NVM is achieved, with a low P/E voltage of +/- 15 V, high mobility up to 0.5 cm(2) V-1 s(-1), reliable P/E endurance property over 1000 cycles, stable data storage retention capability over 6000 s, and excellent mechanical bending durability without visible degradation after 2000 repetitive tensile bending cycles at a small curvature radius of 4.0 mm.

Pentacene Organic Ferroelectric Transistors with [P(vdf-Trfe)] Gate by Langmuir-Blodgett Process

Pentacene Filed-Effect Transistors Using a Polyimide Gate Dielectric Layer

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

Fabrication of Pentacene Organic Field-Effect Transistors with Polyimide Gate Dielectric Layer

Organic Field-Effect Transistors with a Sandwich Structure from Inserting 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1h-benzimidazole] in the Pentacene Active Layer

Facile and Solvent-Free Fabrication of Highly Oriented Ferroelectric Copolymer Thin Films and Its Application in Ferroelectric Field Effect Transistors

Pentacene field-effect transistors with cheap electrode

Property of TIPS-pentacene Transistor Based on Polymer Dielectric

A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment Between Organic Semiconductor and the Charge‐Trapping Dielectric

Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric

Synthesis, Characterization of the Pentacene and Fabrication of Pentacene Field-Effect Transistors

Low-voltage Programmable/erasable High Performance Flexible Organic Transistor Nonvolatile Memory Based on a Tetratetracontane Passivated Ferroelectric Terpolymer

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Organic field-effect transistors with nearly non-injection barrier from source/drain electrodes to pentacene

Electrical properties of organic field-effect transistors based on ribbon-like tips-pentacene crystals

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

Engineering the Mobility Increment in Pentacene-Based Field-Effect Transistors by Fast Cooling of Polymeric Modification Layer

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

Low-voltage Organic Field-Effect Transistors Based on Novel High-Κ Organometallic Lanthanide Complex for Gate Insulating Materials