Abstract:Theoretical and experimental work has revealed that a positively charged insulator layer formed by oxygen‐related defects near pentacene–dielectric interface in organic field‐effect‐transistors (OFETs) severely affects their performance. A novel OFET memory structure with an n‐type organic buffer layer at the pentacene/polymer interface is proposed. In this structure, electrons are induced on the surface of the n‐type organic layer near the interface due to the electrostatic field of the positively charged insulator and partly compensate the local positive charges at the interface, leading to a reduction in the height of hole barrier formed at the interface. On the other hand, the positive space charges will be induced in an extended region in n‐type organic layer due to the limited density of ionized donors, blocking the back transfer of holes to pentacene as a result of the thicker positively charged layer. This idea is implemented in the n‐type PTCDI‐C13‐buffered OFETs with poly(2‐vinyl naphthalene) (PVN) dielectric, in which greatly reduced P/E gate voltages, reliable P/E endurance of more than 10 000 cycles, and excellent retention time of more than 104 s with an ION/IOFF of more than 104 under a set of P/E pulses with low amplitudes and short pulses are achieved in air.

Fabrication of Pentacene Organic Field-Effect Transistors with Polyimide Gate Dielectric Layer

Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist As Gate Dielectrics and Research of Their Degradation

Organic field-effect transistors with nearly non-injection barrier from source/drain electrodes to pentacene

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

Pentacene Organic Ferroelectric Transistors with [P(vdf-Trfe)] Gate by Langmuir-Blodgett Process

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Transparent Pentacene Organic Thin Film Transistors with Polyimide Dielectrics

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Organic Field-Effect Transistors with a Sandwich Structure from Inserting 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1h-benzimidazole] in the Pentacene Active Layer

High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

High Mobility Organic Transistors Fabricated from Single Pentacene Microcrystals Grown on a Polymer Film

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

Study of 6,13-Bis(tri-isopropylsilylethynyl) Pentacene (Tips-Pentacene Crystal) Based Organic Field Effect Transistors (Ofets)

Organic Field-Effect Transistor with Low-Cost CuI/Al Bilayer Electrode

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

A No-Hysteresis TIPS–pentacene:polystyrene Blend-Based Organic Field Effect Transistor by Extruded Direct Ink Writing and the Application in a Resistive Load Inverter Circuit

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer As the Gate Insulator.