Abstract:2D organic crystals exhibit efficient charge transport and field‐effect characteristics, making them promising candidates for high‐performance nanoelectronics. However, the strong Fermi level pinning (FLP) effect and large Schottky barrier between organic semiconductors and metals largely limit device performance. Herein, by carrying out temperature‐dependent transport and Kelvin probe force microscopy measurements, it is demonstrated that the introducing of 2D metallic 1T‐TaSe2 with matched band‐alignment as electrodes for F16CuPc nanoflake filed‐effect transistors leads to enhanced field‐effect characteristics, especially lowered Schottky barrier height and contact resistance at the contact and highly efficient charge transport within the channel, which are attributed to the significantly suppressed FLP effect and appropriate band alignment at the nonbonding van der Waals (vdW) hetero‐interface. Moreover, by taking advantage of the improved contact behavior with 1T‐TaSe2 contact, the optoelectronic performance of F16CuPc nanoflake‐based phototransistor is drastically improved, with a maximum photoresponsivity of 387 A W−1 and detectivity of 3.7 × 1014 Jones at quite a low Vds of 1 V, which is more competitive than those of the reported organic photodetectors and phototransistors. The work provides an avenue to improve the electrical and optoelectronic properties of 2D organic devices by introducing 2D metals with appropriate work function for vdW contacts.

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Remarkable Reduction in the Threshold Voltage of Pentacene-Based Thin Film Transistors with Pentacene/cupc Sandwich Configuration

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Thickness dependence of mobility of pentacene planar bottom-contact organic thin-film transistors

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

High Mobility Organic Transistors Fabricated from Single Pentacene Microcrystals Grown on a Polymer Film

Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Scaling carbon nanotube field effect transistors to 30 nm channel length on pretreated PET

Tetramethylpentacene: Remarkable Absence of Steric Effect on Field Effect Mobility

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors with Controlled Molecule‐Crystal/Electrode Interface

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Low-voltage Organic Field-Effect Transistors Based on Novel High-Κ Organometallic Lanthanide Complex for Gate Insulating Materials

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors

Lowering the Contact Barriers of 2D Organic F 16 CuPc Field‐Effect Transistors by Introducing Van der Waals Contacts

Self-aligned U-gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering.