High‐Performance Bottom‐Contact Organic Thin‐Film Transistors with Controlled Molecule‐Crystal/Electrode Interface

Mingsheng Xu,Masakazu Nakamura,Masatoshi Sakai,Kazuhiro Kudo
DOI: https://doi.org/10.1002/adma.200601792
IF: 29.4
2007-01-01
Advanced Materials
Abstract:An improvement of the performance of bottom-contact organic thin-film transistors is demonstrated by embedding and planarizing the source/drain electrodes in a gate dielectric. The electric contact with the pentacene active layer is superior to conventional electrode configurations because of the favorable growth of pentacene grains adjacent to the source/drain electrode edges: these can be seen in the figure.
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