Controlling the crystal formation in solution-process for organic field-effect transistors with high-performance

Chuan Liu,Yun Li,Yong Xu,Takeo Minari,Songlin Li,Kazuo Takimiya,Kazuhito Tsukagoshi
DOI: https://doi.org/10.1016/j.orgel.2012.08.024
IF: 3.868
2012-01-01
Organic Electronics
Abstract:We control the growth of high-quality organic semiconducting crystals in the aim of transistor application. By finely tuning the processing parameters, both isolated crystals showing characteristic facet angles and irregular-shaped, thin crystalline domains are obtained in large sizes (>400μm). Structural investigations indicate that the various shapes of crystals are in the same crystal structure, and reveal that the irregular-shaped crystalline domains are composed by terrace of molecularly flat regions, which can be up to hundreds of microns in size. When applied in field-effect transistors, the thin crystalline domains exhibit the best performance showing μFET up to 4.4cm2/Vs. This is an order of magnitude higher than that of the transistors made from as-spun films and thick crystals. The approach well demonstrates the importance of fine control of crystal formation and can be generally used for getting organic crystal transistors.
What problem does this paper attempt to address?