Abstract:Miniaturized organic single-crystal arrays that are addressed by reading-out circuits are crucial for high performance and high-level integration organic electronics. Here, we report a lithography compatible strategy to fabricate organic single-crystal arrays via area-selective growth and solvent vapor annealing (SVA). The organic semiconducting molecules can first selectively grow on photographically patterned drain-source electrodes, forming ordered amorphous aggregates that can further be converted to discrete single-crystal arrays by SVA. This strategy can be applied to self-align the microsized organic single crystals on predesigned locations. With this method, suppression of cross-talk among devices, organic field-effect transistors, and basic logic gate arrays with reading-out electrodes are further demonstrated.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c14349?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c14349</a>.AFM image and XRD patterns of the sample after deposition of 12 nm TES-ADT on Au-patterned SiO<sub>2</sub>; optical microscope images of 12 and 6 nm TES-ADT deposited on Au array and subsequent SVA; SEM image of the sample after deposition of 12 nm TES-ADT and subsequent SVA; AFM image and corresponding height profile of TES-ADT crystals on the Au electrode pair array with a spacing of 2.1 μm; optical microscope image, transfer curves, output curves, and histogram of hole carrier mobility of TES-ADT single-crystal OFETs; and optical microscope image, transfer curves, output curves, and histogram of hole carrier mobility of TES-ADT droplet OFETs (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c14349/suppl_file/am0c14349_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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