Abstract:Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation was implemented for formation of FLP-free interfacial states by eliminating chemical disorder and crystal defects arising from metal deposition4-9. However, technical and principal challenges are still existing towards high-yield, wafer-scalable and low-cost integration of TFT devices. Herein, we developed a general, scaling-up strategy to fabricate large-scale, high-performance FLP-free organic TFT (OTFT) arrays by using printed vdW contacts consisting of MXene composite electrodes and 2, 7-dioctyl [1] benzothieno [3, 2-b] [1] benzothiophene (C8BTBT). Room-temperature processes allow for a physically stacked junction without any structural or chemical damages. The OTFT arrays can be printed on a large-area silicon wafer or plastic film with 100% yield, exhibit ultrahigh field-effect mobility ({\mu}_FE) over 17.0 square centimetres per volt per second (cm2 V-1s-1), high on/off ratio exceeding 108, relatively low contact resistance of 3k ohm micrometres. The underlying mechanism for the high device performance was unveiled by Kelvin Probe Force Microscopy (KPFM) combined with theoretical simulation. The results indicate that work function (W_F) of the printed electrodes can be tuned at a wide range of 4.8-5.6 eV, thus significantly lowering the charge-injection barrier at the contact interfaces with ideal FLP-free character (the interfacial factor reaches 0.99 \pm 0.02). This study paves a general strategy for achieving large-scale, high-performance thin-film electronics.

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Organic thin film transistor with a simplified planar structure

Preparation of Organic Thin-Film Field Effect Transistor

Nanoscale flexible organic thin-film transistors

Nanospike Electrode Designs for Improved Electrical Performance in Nanoscale Organic Thin-Film Transistors

Miniature Organic Transistors With Carbon Nanotubes as Quasi-One Dimensional Electrodes

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors with Controlled Molecule‐Crystal/Electrode Interface

One-dimensional (1D) Micro/nanostructures of Organic Semiconductors for Field-Effect Transistors

An Ultra Closely π-Stacked Organic Semiconductor for High Performance Field-Effect Transistors

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

Solution-processed top-contact electrodes strategy for organic crystalline field-effect transistor arrays

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Liquid Crystal-Like Active Layer for High-Performance Organic Field-Effect Transistors

Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor / Graphene Heterointerface.

Interfacial Flat-Lying Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors