High-Mobility Organic Transistors with Wet-Etch-Patterned Top Electrodes: A Novel Patterning Method for Fine-Pitch Integration of Organic Devices

K. Nakayama,M. Uno,T. Uemura,N. Namba,Y. Kanaoka,T. Kato,M. Katayama,C. Mitsui,T. Okamoto,J. Takeya
DOI: https://doi.org/10.1002/admi.201300124
IF: 5.4
2014-04-03
Advanced Materials Interfaces
Abstract:A new patterning process of contact electrodes on organic semiconductors is developed to fabricate high‐mobility, short‐channel organic transistors for high‐speed operation. Deposition of gold electrodes on pristine organic films and wet‐etching of gold films make it possible to obtain low contact resistance of about 200 Ω cm. The highest cut‐off frequency of 19 MHz is demonstrated for p‐type transistors.
materials science, multidisciplinary,chemistry
What problem does this paper attempt to address?