Abstract:Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.

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Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Enhanced performance in doped micro-nano porous organic thin-film transistors

Enhanced Performances of Organic Thin Film Transistors by Dual Interfacial Modification of Dielectric Layer

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Performance enhancement of p-type organic field-effect transistor through introducing organic buffer layers

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

A high-performance organic thin-film transistor with Parylene/PMMA bilayer insulation based on P3HT

Direct Patterning on Top-Gate Organic Thin-Film Transistors: Improvement of On/Off Ratio, Subthreshold Swing, and Uniformity

Onset Voltage Shift in the Organic Thin-Film Transistor with an Atomic-Layer-deposited Charge-Injection Interlayer

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

Improving Electron Injection of Organic Light-Emitting Transistors via Interface Layer Design

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Stacked pentacene layer organic thin-film transistors with improved characteristics

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Liquid Crystal-Like Active Layer for High-Performance Organic Field-Effect Transistors

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Modification of Indium Tin Oxide Surface with HCl for Source/Drain Electrodes in Organic Thin Film Transistors