Abstract:Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Onset Voltage Shift in the Organic Thin-Film Transistor with an Atomic-Layer-deposited Charge-Injection Interlayer

Metal/Organic Interfaces: Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer (adv. Funct. Mater. 25/2016)

Improving the Performance of Organic Thin-Film Transistor with a Doped Interlayer

Through thick and thin: tuning the threshold voltage in organic field-effect transistors

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Interface energy alignment of atomic-layer-deposited VOx on pentacene: An in situ photoelectron spectroscopy investigation

Improving Charge Injection for Organic Field‐Effect Transistor Array via Chemical Functionalized Van der Waals Top‐Contacts

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

Effective encapsulation of ZnO thin film transistors controlled by thermal energy

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlOX Dielectric