Abstract:Bottom-gate pentacene organic thin-film transistors (OTFTs) with HfLaO gate dielectric have been fabricated on different substrates with different gate materials (namely, Ti- or Al-coated vacuum tape, n-Si wafer, and ITO-coated glass) and the effects of the gate material on device performance have been studied. Although the dielectric surface and pentacene grain on the Ti- and Al-coated vacuum tapes are much rougher and much smaller, respectively, than those on the n-Si wafer, the OTFTs fabricated on the two vacuum tapes have much higher carrier mobility than that fabricated on the n-Si wafer, implying that the gate material can greatly affect the device performance. Like the case for MOSFET, the possible reason is that metal gate can screen the remote phonon scattering of HfLaO and avoid the remote Coulomb scattering of silicon gate, thus resulting in higher carrier mobility for the OTFTs with Al and Ti gate electrodes. As a result, a high-performance OTFT with a carrier mobility of 4.95 cm(2)V(-1)s(-1) and threshold voltage of -1.31 V was successfully fabricated on vacuum tape by using Ti gate.

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Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer As the Gate Insulator.

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

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Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer

Organic Thin-Film Transistors Having Inorganic/Organic Double Gate Insulators

Enhanced Performances of Organic Thin Film Transistors by Dual Interfacial Modification of Dielectric Layer

Performance Improvement of Organic Thin Film Transistors by Using Active Layer with Sandwich Structure

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric

High-mobility Pentacene Organic Thin-Film Transistors Achieved by Reducing Remote Phonon Scattering and Surface-Roughness Scattering

Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer

The Interface Modification of Low-Voltage Pentacene-Based Organic Phototransistors

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Improved Pentacene Growth Continuity for Enhancing the Performance of Pentacene-Based Organic Thin-Film Transistors

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Improving the Performance of Organic Thin-Film Transistor with a Doped Interlayer

Low-voltage, High-Performance N-Channel Organic Thin-Film Transistors Based on Tantalum Pentoxide Insulator Modified by Polar Polymers