Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

Yi Li,Qi Liu,XiZhang Wang,Tsuyoshi Sekitani,Takao Someya,Zheng Hu
DOI: https://doi.org/10.1007/s11431-011-4693-5
2012-01-01
Science China Technological Sciences
Abstract:We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon dioxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer. The threshold voltage decreased remarkably from ca. −20 V to a few volts (below −7.6 V) while the mobility increased 1.5–3 times after the insertion of the interlayer of only ca. 2 nm, which could be attributed to the reduction of the carrier injection barrier. The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.
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