Abstract:Interface between semiconductor layer and dielectric layer is crucial to the study of charge transportation mechanism and the improvement of devices performance. In our study, polymethyl methacrylate (PMMA) was spin-coated on the dielectric layer, serving as a modifying thin-film layer. The modification enhanced the mobility of the pentacene-based organic phototransistor, which was 0.24 cm(2)/Vs while it was 0.16 cm(2)/Vs without the modifier, indicating the decrease of defect density in the interface. Furthermore, the photostability of the device was improved with the threshold voltage (VT) shifting of only 3.5 V, even under strong illumination at irradiance of 100 mW/cm(2). Another advantage was that the operating voltage was low, about 3.5 V. The photosensitive performances of the device without modifier in the same conditions were also investigated. The mobility had little response to the strong light, however, the value of VT shifted to more positive region from 5 V in the dark to 20 V under illumination, which could be attributed to the charge trapping after the dissociation of photogenerated excitons. The shift of threshold voltage, maximum photoresponsivity and photocurrent/dark-current ratio were 15 V, 51 mA/W and 1729, respectively. The results suggested the application of memory which was novel for the optically writing and electronically erasing process.

Remarkable Reduction in the Threshold Voltage of Pentacene-Based Thin Film Transistors with Pentacene/cupc Sandwich Configuration

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Low-Voltage Pentacene Thin-Film Transistors with Ta2o5 Gate Insulators and Their Reversible Light-Induced Threshold Voltage Shift

Improved Pentacene Growth Continuity for Enhancing the Performance of Pentacene-Based Organic Thin-Film Transistors

Thickness dependence of mobility of pentacene planar bottom-contact organic thin-film transistors

High-mobility Pentacene Organic Thin-Film Transistors Achieved by Reducing Remote Phonon Scattering and Surface-Roughness Scattering

Surface Catalytic Modification of Conjugated Polymer on Low‐Cost Bottom Contact for Improved Injection Efficiency of Organic Transistors

Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

Organic Field-Effect Transistors with a Sandwich Structure from Inserting 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1h-benzimidazole] in the Pentacene Active Layer

Stacked pentacene layer organic thin-film transistors with improved characteristics

Interfacial Modification And Memory Effect In Pentacene-Based Phototransistors

Performance Enhancement of Organic Thin-Film Transistors with Improved Copper Phthalocyanine Crystallization by Inserting Ultrathin Pentacene Buffer

Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer

High performance submicrometer pentacene-based organic thin-film transistor using planar bottom-contact structure

Performance Improvement of Organic Thin Film Transistors by Using Active Layer with Sandwich Structure

Low-Voltage Organic Thin-Film Transistors with Improved Stability and Large Transconductance

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis