Abstract:This study systematically investigates the effects of pentacene deposition rates and channel lengths on the electrical characteristics of pentacene- based organic thin- film transistors (OTFTs), and the performance degradation of OTFTs under the positive drain bias stress. With a slower deposition rate of the pentacene channel layer, the larger grain size is formed, and it improves the performance of pentacene- based OTFTs. As the channel length decreases, the threshold voltage (V-TH) shifts toward the positive direction and the field- effect mobility (mu(FE)) decreases, which are due to the drain-induced barrier lowering effect and the lower mobility in the active channel near the region of source/drain electrodes, respectively. In addition, we also propose a mechanism to present the channel length dependence on the field-effect mobility. Results also show that the pentacene- based OTFTs, which are under positive drain bias stress, exhibit greater performance degradation than those under negative drain bias stress. The greater performance degradation, the decreasing I-ON and the larger VTH shift are due to the greater trap state density (N-trap) created in the bulk channel by the large lateral electrical field and the carriers injected into the gate insulator by the large vertical electrical field, respectively.

Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Remarkable Reduction in the Threshold Voltage of Pentacene-Based Thin Film Transistors with Pentacene/cupc Sandwich Configuration

Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

Thickness dependence of mobility of pentacene planar bottom-contact organic thin-film transistors

Pentacene Organic Ferroelectric Transistors with [P(vdf-Trfe)] Gate by Langmuir-Blodgett Process

Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist As Gate Dielectrics and Research of Their Degradation

Source/drain Electrodes Contact Effect on the Stability of Bottom-Contact Pentacene Field-Effect Transistors

Performance Improvement of Bottom-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting a Thin Polytetrafluoroethylene Buffer Layer

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer As the Gate Insulator.

High performance submicrometer pentacene-based organic thin-film transistor using planar bottom-contact structure

Improved Pentacene Growth Continuity for Enhancing the Performance of Pentacene-Based Organic Thin-Film Transistors

Low-Voltage Pentacene Thin-Film Transistors with Ta2o5 Gate Insulators and Their Reversible Light-Induced Threshold Voltage Shift

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Research on Operating Degradation of Pentacene Thin-Film Transistors