Abstract:The memory nature and mechanism of the Ta2O5-gate-dielectric-based organic phototransistor memory (OPTM) have been studied. The UV–Vis absorption spectra and the X-ray photoelectron spectroscopy indicate that Ta2O5 owns positive interfacial charge because of the existence of Ta–OH. The hydroxide results in oxygen deficiency in Ta2O5 which is proposed to trap electrons. The characteristics of Ta2O5-based capacitor and the energy level alignment at Ta2O5–pentacene interface reveal that the electron-injection process is favorable which stimulates the electron-trapping process in Ta2O5. The Kelvin probe force microscopy of the Ta2O5-pentacene interface certificates the electron-injection and electron-trapping processes as well. It is the positive charges in Ta2O5 and energy level alignment that lead to the memory effect of Ta2O5-gate-dielectric-based OPTM. Compared to Ta2O5, polymethyl methacrylate (PMMA) does not have so strong a positive interface. Accordingly, PMMA films of different thickness are adopted on Ta2O5 to tune the Ta2O5-pentacene interface, offering control of the memory properties including the memory window and retention time. The understanding of the mechanism is at the forefront of devising high-performance OPTM devices.

Pentacene Thin-Film Transistors with Ta2o5 As the Gate Dielectric

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Improved Photostability of Organic Thin Film Transistors with Tantalum Oxide/Poly(4-Vinylphenol) Double Gate Insulators

Low-Voltage Pentacene Thin-Film Transistors with Ta2o5 Gate Insulators and Their Reversible Light-Induced Threshold Voltage Shift

High-mobility Pentacene Thin-Film Transistor by Using LaxTa(1−x)Oy As Gate Dielectric

Transparent Pentacene Organic Thin Film Transistors with Polyimide Dielectrics

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

Pentacene organic thin-film transistors on flexible paper and glass substrates

High-performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric

Pentacene Organic Thin-Film Transistor with Hfyo Gate Dielectric Made on Adhesive Vacuum Tape

The understanding of the memory nature and mechanism of the Ta2O5-gate-dielectric-based organic phototransistor memory

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

High-mobility Pentacene Organic Thin-Film Transistors Achieved by Reducing Remote Phonon Scattering and Surface-Roughness Scattering

Low Temperature Organic Thin-Film Transistor Based On Tantalum Pentoxide Prepared By Anodization

High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

High-mobility Pentacene OTFT with TaLaO Gate Dielectric Passivated by Fluorine Plasma

Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist As Gate Dielectrics and Research of Their Degradation

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

The Interface Modification of Low-Voltage Pentacene-Based Organic Phototransistors