Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

Pentacene Thin-Film Transistors with Sol-Gel Derived Amorphous Ba0.6Sr0.4TiO3 Gate Dielectric

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba 0.4 Sr 0.6 TiO 3 Dielectric

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

Structure and Ferroelectric Properties of Barium Titanate Films Synthesized by Sol–gel Method

Pentacene Thin-Film Transistors with Ta2o5 As the Gate Dielectric

BST Thin Film Deposited on Glass Substrate with TISI Nanowire Electrode by RF-Sputtering Method

Transparent Pentacene Organic Thin Film Transistors with Polyimide Dielectrics

Characteristics of BST Thin Film Prepared by Novel Chemical Solution Deposition Method for High-Density DRAM Application

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Low-voltage Organic Field-Effect Transistors Based on Novel High-Κ Organometallic Lanthanide Complex for Gate Insulating Materials

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Microstructure And Electrical Properties Of (Ba,Sr)Tio3 Thin Films Prepared By A Sol-Gel Method

Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel method

Thermo-Sensitive Ba 0.64 Sr 0.36 TiO 3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Preparation and characterization of crystalline Ba0.5Sr0.5TiO3 thin films on FTO transparent electrodes

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor