Thermo-Sensitive Ba 0.64 Sr 0.36 TiO 3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Liang Dong,Ruifeng Yue,Litian Liu,Xiaoning Wang,Jianshe Liu,Tianling Ren
DOI: https://doi.org/10.1023/A:1025061623647
2003-01-01
International Journal of Infrared and Millimeter Waves
Abstract:Ba 0.64 Sr 0.36 TiO 3 (BST) thin films are prepared on Pt/Ti/SiO 2 /Si 3 N 4 /SiO 2 /Si substrates by a sol-gel method. Thermo-sensitive BST thin film capacitors with a Metal-Ferroelectrics-Metal (M-F(BST)-M) structure are fabricated as the active elements of dielectric type uncooled infrared sensors. XRD are employed to analyze the crystallographic structures of the films. AFM observations reveal a smooth and dense surface of the films with an average grain size of about 35 nm. Rapid temperature annealing (RTA) process is a very efficient way to improve crystallization quality. The preferable annealing temperature is 800°C for 1 min. The butterfly shaped C-V curves of the capacitors indicate the films have a ferroelectric nature. The dielectric constant and dielectric loss of the films at 100 kHz are 450 and 0.038, respectively. At 25°C, where the thermo-sensitive capacitors work, the temperature coefficient of dielectric constant (TCD) is about 5.9 %/°C. These results indicate that the capacitors with sol-gel derived BST thin films are promising to develop dielectric type uncooled infrared sensors.
What problem does this paper attempt to address?