BST Thin Film Deposited on Glass Substrate with TISI Nanowire Electrode by RF-Sputtering Method

Ren Zhaodi,Shen Mei,Li Weimin,Hu Anhong,Wei Defa,Han Gaorong,Weng Wenjian,Ma Ning,Du Piyi
DOI: https://doi.org/10.1080/00150190902966750
2009-01-01
Ferroelectrics
Abstract:Ferroelectric Ba0.7Sr0.3TiO3 (BST) thin film is sputtered on the titanium silicide bottom layer with TiSi nanowires on glass substrate at room temperature and annealed at 450 degrees C for 30 minutes. The phase structure, morphology, dielectric properties of the BST thin film are measured by X-ray diffraction, Field emission scanning electron microscopy, and Impedance Analyzer, respectively. The results show that the crystallinity of the BST thin film is perfect, and the capacitance is independent on the frequency between about 100 KHz and 8 MHz. The tunability is 52.1% with 9V applied dc bias voltage and the dielectric loss is below 0.09.
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