Preparation and Dielectric Properties of BST Films Deposited on Ti5Si3 Electrode Layer

Ren Zhaodi,Du Piyi,Xu Ming,Weng Wenjian,Han Gaorong,Shen Ge
DOI: https://doi.org/10.3321/j.issn:1002-185X.2008.z1.119
2008-01-01
Rare Metal Materials and Engineering
Abstract:BST thin films of Ba:Sr of 6:4 were successfully prepared on glass substrate coated with Ti5Si3 electrode layer by sol-gel method. The BST films were heat-treated at 600 degrees C and then analyzed by XRD and resistance analytical apparatus. The effects of heat-treatment on the dielectric properties of the BST films were investigated. The BST films with little defects and good quality can be successfully prepared on Ti5Si3 electrode layer as a result of reduced amount of oxide in Ti5Si3 and the oxide vacancy defects in BST films. Rapid heating resulted in the formation of considerable amount of crystal phases in the films and repeating the heat treatment decreased the defects in the films. The capacity and the dielectric loss of the films were controlled by the heat treatment.
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