Abstract:(Pbx,Sr1−x )0.85Bi0.1TiO3 thin films with the perovskite phase structure were prepared on an ITO glass substrate by sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and an impedance analyzer were respectively used in order to characterize the phase status, morphology and dielectric properties of the thin films. The results show that during the formation process of (Pbx,Sr1−x )0.85Bi0.1TiO3 thin films, the nucleus of the perovskite phase are initially formed and then congregated. These aggregated nucleus are then transformed as the perovskite-phase crystalline in the thin film. Finally, the crystalline phase grows and separates gradually to form the perfect crystalline-phase structure. The content of the perovskite phase formed in the thin film under rapid thermal process (RTP) is more than that formed under traditional heat treatment with kinetic equilibrium. This is due to the high active decomposed ions that form the perovskite phase directly when heat-treated by RTP. The formation of the perovskite phase therefore overcomes a much lower barrier under RTP than that under traditional calcinations. The structure of the perovskite phase has a close relation to the ratio of Pb/Sr in the system because of the radius difference between Pb2+ and Sr2+. The transformation temperature between the cubic and the tetragonal structures of the perovskite phase increases with increasing Pb2+ content because the radius of Pb2+ is larger than that of Sr2+. It appears at room temperature when the content of Pb2+/Sr2+ is about 40/60 in the thin film. Meanwhile, the tetragonality of the perovskite phase is increased when Pb2+ ions increase due to its high polarization. The higher tunability of the (Pbx,Sr1−x )0.85Bi0.1TiO3 thin film is exhibited when the film composition is close to the transformation point between the paraelectric and ferroelectric phases. Pb2+ ions show a dominant factor to affect the Curie point of the system and then changing tunability.

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Preparation of (1− x %)(Na 0.5 Bi 0.5 )TiO 3 – x %SrTiO 3 thin films by a sol–gel method for dielectric tunable applications

Preparation of (1−%)(NaBi)TiO–%SrTiO thin films by a sol–gel method for dielectric tunable applications

Enhanced Tunable Dielectric Properties of Ba0.5Sr0.5TiO3/ Bi1.5Zn1.0Nb1.5O7 Multilayer Thin Films by a Sol-Gel Process

Preparation and Electrical Properties of (1−x)(na0.5bi0.5)tio3–xbialo3 Thin Films by a Sol–gel Process

Structures And Tunability Of Ba0.5sr0.5tio3/Bi1.5zn1.0nb1.5o7 Multilayer Thin Films Grown On Pt/Al2o3 Substrates

Microstructure And Electrical Properties Of (Ba,Sr)Tio3 Thin Films Prepared By A Sol-Gel Method

Low Temperature Preparation of Baxsr1-Xtio3 Thin Films Prepared by Sol-Gel-Hydrothermal Method

Structure and Dielectric Properties of Yttrium-Doped (Ba_(0.6)Sr_(0.4))_0.8TiO_3 Thin Films by Improved Sol-Gel Method

Effect of lead on formation and dielectric tunability of (Pb<sub>x</sub>,Sr<sub>1− <i>x</i> </sub>)<sub>0.85</sub>Bi<sub>0.1</sub>TiO<sub>3</sub> thin films

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Processing and Properties of Ba0.5sr0.5tio3/Bi1.5zn1.0nb1.5o7/Ba0.5sr0.5tio3 Sandwich Thin Films for Tunable Microwave Devices

Dielectric Characteristics of Ba_(0.65)Sr_(0.35)TiO_3 Thin Films by Sol-Gel Method

Preparations and Dielectric Properties of Ba0.80Sr0.20TiO3/PbO–B2O3 Thick Films

Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel method

Preparation and characterization of crystalline Ba0.5Sr0.5TiO3 thin films on FTO transparent electrodes

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Effect of Lead on Formation and Dielectric Tunability of (pbx,sr1−x )0.85bi0.1tio3 Thin Films