Flexible Lead-Free Film Capacitor Based on BiMg0.5Ti0.5O3-SrTiO3 for High-Performance Energy Storage

Chengwen Bin,Xu Hou,Han Yang,Luocheng Liao,Yadan Xie,Hua Wei,Yunya Liu,Xumin Chen,Jie Wang

DOI: https://doi.org/10.1016/j.cej.2022.136728

2022-01-01

Abstract:Flexible dielectric film capacitors with high performance of energy storage has shown great promise as a solution to the flexibility and stability of modern electronics and electric power systems. Herein, a novel relaxorferroelectric BiMg0.5Ti0.5O3-xSrTiO3 (BMT-xSTO, x = 0.1, 0.2, 0.3 and 0.4) thin film capacitors are obtained via one-step fabrication on flexible mica substrates. A superior energy storage density of 109.7 J cm-3 and a pretty high efficiency of 80.6% are simultaneously achieved in the BMT-0.3STO film capacitor. At the same time, the energy storage performance can be stable in the temperature range of 25 to 200 degrees C, the wide frequency range of 500 Hz to 10 kHz, and even after 108 electrical cycles. In addition, under the bending radii from 16 mm to 4 mm, there is no obvious variation in performance even after 10(4) mechanical fatigue cycles, indicating the super flexibility and stability of the film capacitors. The prominent properties of the BMT-based film capacitor are mainly attributed to the improvement of relaxation behavior by introducing appropriate STO, which are explained by the domain evolution via piezo-response force microscopy and phase field simulation. The present work suggests a new way to obtain lead-free and flexible dielectric film capacitors for flexible energy storage technology.