Über die Lokalisation einseitiger Gesichtshalluzinationen

S. E. Henschen

DOI: https://doi.org/10.1007/BF01814560

1925-12-01

European Archives of Psychiatry and Neurological Sciences

Abstract:

What problem does this paper attempt to address?

Ultrahigh Energy Storage Performance of Flexible BMT-Based Thin Film Capacitors

Chengwen Bin,Xu Hou,Yadan Xie,Jingtong Zhang,Han Yang,Linrong Xu,Hua Wei,Jie Wang

DOI: https://doi.org/10.1002/smll.202106209

IF: 13.3

2022-01-01

Small

Abstract:Ferroelectric thin film capacitors have attracted increasing attention because of their high energy storage density and fast charge-discharge speed, but less attention has been paid to the realization of flexible capacitors for wearable electronics and power systems. In this work, flexible xMn-BiMg0.5Ti0.7O3 (xMn-BMT0.7) thin film capacitors with ultrahigh energy storage density and good stability are deposited on mica substrate. The introduction of excess TiO2 with an amorphous structure contributes to the forming of the polar nano regions, resulting in the reduced ferroelectric hysteresis. In order to further improve the energy storage performance, Mn doping increases the polarization by regulating chemical pressure in the lattices and inhibits the valence change of Ti4+. Especially in the 1.5% Mn-BMT0.7 film capacitor, an ultrahigh energy storage density of 124 J cm(-3) and an outstanding efficiency of 77% are obtained, which is one of the best energy storage performances recorded for ferroelectric capacitors. In addition, the flexible ferroelectric film capacitor also exhibits good thermal stability (25-200 degrees C), high frequency reliability (500 Hz-10 kHz), excellent electrical (10(8) cycles), and mechanical (10(4) cycles) fatigue properties. This work is expected to pave the way for the application of BMT-based thin film capacitors in flexible energy storage systems.
Interlayer Coupling Enhanced Energy Storage Performance in a Flexible BMT-BTO/BMT Multilayer Ferroelectric Film Capacitor.

Chengwen Bin,Xu Hou,Keyi Wang,Luocheng Liao,Yadan Xie,Han Yang,Hua Wei,Yunya Liu,Jie Wang

DOI: https://doi.org/10.1021/acsami.2c14302

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Flexible ferroelectric capacitors with high energy density and storage efficiency are highly desirable in the next generation of flexible electronic devices. To develop high-performance ferroelectric capacitors, a conventional approach is chemical modification. Here, a novel approach of interlayer coupling is proposed to achieve high energy storage performance in BiMgTiO-BaTiO/BiMgTiO (BMT-BTO/BMT) multilayer ferroelectric films fabricated on flexible mica substrates via a sol-gel coating method. The interlayer electrostatic coupling between the ferroelectric BMT and relaxor ferroelectric BMT-BTO layers leads to small remnant polarization and large breakdown field strength, resulting in an outstanding energy storage density of ∼106.8 J cm and a good efficiency of ∼75.6% in the multilayer thin films. Further, the energy storage performance remains stable in a wide range of temperatures (25-200 °C) and frequencies (500 Hz to 10 kHz) after 10 electrical loading cycles. The energy storage performance also has no obvious deterioration when the multilayer film experiences 10 mechanical bending cycles with a bending radius of 4 mm. The approach proposed in the present work should be generally implementable in other multilayer flexible ferroelectric capacitors and offers a novel avenue to enhance energy storage performance by tuning the interlayer coupling.
Flexible Lead-Free Film Capacitor Based on BiMg0.5Ti0.5O3-SrTiO3 for High-Performance Energy Storage

Chengwen Bin,Xu Hou,Han Yang,Luocheng Liao,Yadan Xie,Hua Wei,Yunya Liu,Xumin Chen,Jie Wang

DOI: https://doi.org/10.1016/j.cej.2022.136728

2022-01-01

Abstract:Flexible dielectric film capacitors with high performance of energy storage has shown great promise as a solution to the flexibility and stability of modern electronics and electric power systems. Herein, a novel relaxorferroelectric BiMg0.5Ti0.5O3-xSrTiO3 (BMT-xSTO, x = 0.1, 0.2, 0.3 and 0.4) thin film capacitors are obtained via one-step fabrication on flexible mica substrates. A superior energy storage density of 109.7 J cm-3 and a pretty high efficiency of 80.6% are simultaneously achieved in the BMT-0.3STO film capacitor. At the same time, the energy storage performance can be stable in the temperature range of 25 to 200 degrees C, the wide frequency range of 500 Hz to 10 kHz, and even after 108 electrical cycles. In addition, under the bending radii from 16 mm to 4 mm, there is no obvious variation in performance even after 10(4) mechanical fatigue cycles, indicating the super flexibility and stability of the film capacitors. The prominent properties of the BMT-based film capacitor are mainly attributed to the improvement of relaxation behavior by introducing appropriate STO, which are explained by the domain evolution via piezo-response force microscopy and phase field simulation. The present work suggests a new way to obtain lead-free and flexible dielectric film capacitors for flexible energy storage technology.
Fatigue‐Free Aurivillius Phase Ferroelectric Thin Films with Ultrahigh Energy Storage Performance

Zhongbin Pan,Peng Wang,Xu Hou,Lingmin Yao,Guangzu Zhang,Jie Wang,Jinjun Liu,Meng Shen,Yujing Zhang,Shenglin Jiang,Jiwei Zhai,Qing Wang

DOI: https://doi.org/10.1002/aenm.202001536

IF: 27.8

2020-01-01

Advanced Energy Materials

Abstract:Dielectric capacitors have become a key enabling technology for electronics and electrical systems. Although great strides have been made in the development of ferroelectric ceramic and thin films for capacitors, much less attention has been given to preventing polarization fatigue, while improving the energy density, of ferroelectrics. Here superior capacitive properties and outstanding stability are reported over 10(7)charge/discharge cycles and a wide temperature range of -60 to 200 degrees C of ferroelectric Aurivillius phase Bi3.25La0.75Ti3O12-BiFeO3(BLT-BFO), which represents one of the best capacitive performances recorded for the ferroelectric materials. The modification of BLT thin films with BFO overcomes the constraints of ferroelectric Aurivillius compounds and presents an unprecedented combination of the ideal features including improved polarization, reduced ferroelectric hysteresis, and lowered leakage current for high-energy-density capacitors. Given the lead-free and fatigue-free nature of this Aurivillius phase ferroelectric, this work unveils a new approach towards high-performance eco-friendly ferroelectric materials for electrical energy storage applications.
Flexible lead-free oxide film capacitors with ultrahigh energy storage performances in extremely wide operating temperature

Zhongshuai Liang,Chunrui Ma,Lvkang Shen,Lu Lu,Xiaoli Lu,Xiaojie Lou,Ming Liu,Chun-Lin Jia

DOI: https://doi.org/10.1016/j.nanoen.2018.12.056

IF: 17.6

2019-03-01

Nano Energy

Abstract:Here, large-scaled flexible Ba(Zr0.35Ti0.65)O3 ferroelectric film capacitors not only exhibit ultrahigh energy storage performances but also have excellent mechanical flexibility and ferroelectric fatigue endurance. In ultra-wide temperature range from −100 °C to 200 °C, the flexible Ba(Zr0.35Ti0.65)O3 film capacitors show excellent thermal stability with recoverable energy density (W rec) of over 65.1 J/cm3 and efficiency (η) of over 72.9%, which presents the highest W rec obtained up to now not only in flexible polymer film dielectric capacitors but also in the ceramic film capacitors including lead-free and lead-based film capacitors on rigid substrates in this measuring temperature range. All these results demonstrate that the flexible Ba(Zr0.35Ti0.65)O3 film capacitors have huge potential in the applications of flexible electronics operated in cold polar regions, extreme altitudes and outer space, as well as high temperature regions.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Interface engineering to optimize polarization and electric breakdown strength of Ba2Bi3.97Pr0.03Ti5O18/BiFeO3 ferroelectric thin-film for high-performance capacitors

Peng Wang,Xusheng Wang,Guorong Li,Yanxia Li,Xi Yao,Zhongbin Pan

DOI: https://doi.org/10.1016/j.cej.2021.133676

IF: 15.1

2022-04-01

Chemical Engineering Journal

Abstract:Electrostatic capacitors based on dielectrics are ubiquitous components for applications in modern electronics and electric power systems. However, the relatively low energy density of electrostatic capacitors, which is one or two orders of magnitude lower than that of the batteries, has greatly hindered the implementation of its in energy storage devices. Here, we propose a strategy to overcome the tradeoff between high polarizability and breakdown electric field, and attain great enhancement energy storage density in the lead-free (Ba2Bi3.97Pr0.03Ti5O18/BiFeO3)N (BBPT/BFO)N multilayer ferroelectric thin films with different BFO layers through interface engineering. The interface engineering could be utilized to concurrently modify both polarization and local electric field strength caused by the synergistic effect of multiple polar structures and electric field amplifying effect. Accordingly, the discharged energy density of the optimized (BBPT/BFO)1 ferroelectric thin-film capacitors as high as ∼ 79.3 J/cm3 with discharged efficiency exceeding ∼ 75 % are achieved. Combined with its fatigue-free, favorable temperature and frequency stabilities, the multilayer ferroelectric thin films of BBPT/BFO could be a promising dielectric material for practical energy storage applications.

engineering, chemical, environmental
Enhanced energy-storage performance in a flexible film capacitor with coexistence of ferroelectric and polymorphic antiferroelectric domains

Xiaokuo Er,Peng Chen,Jiesen Guo,Yuxuan Hou,Xiaobo Yu,Pingping Liu,Yang Bai,Qian Zhan

DOI: https://doi.org/10.1016/j.jmat.2021.08.005

IF: 8.589

2022-03-01

Journal of Materiomics

Abstract:The flexible capacitor exhibits a high recoverable energy density of ≈ 44.2 J/cm3, a large electric breakdown strength of 3011 kV/cm, excellent frequency stability (500 Hz-20 kHz) and high thermal stability over 30-190 ˚C.The capacitor maintains a high energy storage performance under various bending radii (R = 2-10 mm) or 103 repeated bends at 4 mm.The coexistence of ferroelectric and antiferroelectric phases was demonstrated on the microscopic scale.Advances in flexible electronics are driving dielectric capacitors with high energy storage density toward flexibility and miniaturization. In the present work, an all-inorganic thin film dielectric capacitor with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases based on Pb0.96La0.04(Zr0.95Ti0.05)O3 (PLZT) was prepared on a 2D fluorophlogopite mica substrate via a simple one-step process. The flexible capacitor exhibits a high recoverable energy density (Urec) of ≈ 44.2 J/cm3, a large electric breakdown strength (EBDS) of 3011 kV/cm, excellent frequency stability (500 Hz-20 kHz) and high thermal stability over 30-190 ˚C. It also demonstrates an outstanding bending endurance, which can maintain a high energy storage performance under various bending radii (R = 2-10 mm) or 103 repeated bends at 4 mm. The FE phase is stable near the film surface and the interface with the bottom electrode. The AFE phase with multi-domains has incommensurate modulation structures with super-periodicity of 6.5, 6.9 and 5.2. It indicates that the PLZT/LNO/F-Mica capacitor has high potential for energy storage application and may provide great opportunities for exploring new energy storage materials.Download : Download high-res image (243KB)Download : Download full-size image

materials science, multidisciplinary,chemistry, physical,physics, applied
Synergistic Function via Amorphous and Nanoscale Polarization Heterogeneous Regions in (1-x)BaTiO3 -xBi(Ni0.5 Zr0.5 )O3 Thin Film with Ultrahigh Energy Storage Capability and Stability

Rui Huang,Hongye Wang,Cheng Tao,Minghe Cao,Hua Hao,Zhonghua Yao,Hanxing Liu

DOI: https://doi.org/10.1002/smtd.202100787

IF: 12.4

Small Methods

Abstract:Dielectric film capacitors are considered as potential candidates for advanced power electronics technology due to their extremely high-power densities and outstanding mechanical and thermal stability, but the further improvement of energy storage density is still needed. Here, a strategy is proposed to enhance the energy storage properties by introducing nanoscale polarization regions into amorphous films, which can significantly improve the maximum polarization and maintain a high breakdown strength. The (1-x)BaTiO3 -xBi(Ni0.5 Zr0.5 )O3 ((1-x)BT-xBNZ) thin films are fabricated by the sol-gel method and the amorphous films with nanoscale polarization regions are obtained by adjusting the preparation process. Consistent with the conjecture, amorphous phase and nanoscale polarization regions in the (1-x)BT-xBNZ films are clearly observed by electron diffraction. Results show that giant recoverable energy density of 103.7 J cm-3 with high energy efficiency of 88.3% are simultaneously achieved at 8.3 MV cm-1 in 0.92BT-0.08BNZ thin films. Furthermore, the 0.92BT-0.08BNZ thin film exhibits excellent thermal stability in a wide temperature range of 20-200 °C, ∆Wrec /Wrec20 °C < 2.2%. This work provides a novel method for dielectric thin film capacitors applied in high temperature and electric field.
High Energy Storage Performance in BTO-based Ferroelectric Films

Li Ren,Kaixin Guo,Ruirui Cui,Min Zhang,Tingyu Zhao,Xu Wang,Chaoyong Deng

DOI: https://doi.org/10.1016/j.ceramint.2024.08.171

IF: 5.532

2024-01-01

Ceramics International

Abstract:Dielectric capacitors play an increasingly important role in modern electronic power systems due to their ultrahigh charging and discharging speeds and power density. Much research has focused on enhancing dielectric breakdown strength to achieve better energy storage performance; however, this increases the potential for heat generation and unexpected insulation failures, thereby affecting the stability and lifespan of devices. This study introduces a small amount of Na+ dopants at the A-site of BaTiO3, inducing lattice distortions and enhancing local polarization to increase energy storage density rather than through enhancing breakdown strength. The introduction of Na+ enhances the ferroelectric properties, with polar nano-regions (PNRs) gradually evolving into long-range ordered large domains. In the Ba0.985Na0.015TiO3 films, the coexistence and coupling of abundant PNRs with a few long-range ordered ferroelectric domains result in high saturation polarization and low residual polarization. At a moderate electric field of 2.3 MV cm(-1), an ultrahigh energy density of 44.3 J cm(-)(3) and a high energy storage efficiency of 78.6 % were obtained. Additionally, the film exhibits excellent frequency stability (100 Hz-20 kHz), temperature stability (30-180 degrees C), fatigue resistance (10(7) cycles), and high pulsed discharge energy density, along with great thermal stability. This work provides new insights into achieving exceptional energy storage performance in single-phase films.
Ultrahigh-temperature capacitors realized by controlling polarization behavior in relaxor ferroelectric

Tian-Yi Hu,Chunrui Ma,Shao-dong Cheng,Guangliang Hu,Ming Liu

DOI: https://doi.org/10.1016/j.cej.2024.152365

IF: 15.1

2024-05-25

Chemical Engineering Journal

Abstract:Dielectric film capacitors have drawn much attention in recent years due to the fast charge–discharge rate, while the energy storage performance at ultra-high temperature needs to be satisfied for the increasing demand of the market. Here, we develop an ultrahigh-temperature capacitor of relaxor ferroelectric (RFE) films via controlling polarization behavior. The (1 1 0) oriented 0.85BaTiO 3 -0.15Bi(Mg 0.5 Zr 0.5 )O 3 (BT-BMZ) thin film, with anisotropic strain and the optimal ratio of extrinsic/intrinsic polarization, exhibits minimized hysteresis loss and maintains maximum polarization. The (1 1 0) oriented film capacitor shows giant energy storage density 104.94 J/cm 3 , with energy storage efficiency 75.83 % BT-BMZ at room temperature. Moreover, the BT-BMZ capacitor achieves excellent thermal stability, from −100 °C to 400 °C, with an energy density 51.61 J/cm 3 at an efficiency 79.36 % due to the low leakage current and hysteresis loss. This work demonstrates that the energy storage performance can be enhanced by adjusting the ratio of intrinsic/extrinsic polarization and provides a feasible method for improving high-temperature performance of capacitors.

engineering, chemical, environmental
Amorphous/Crystalline Engineering of BaTiO 3 -Based Thin Films for Energy-Storage Capacitors

Dongxu Li,Xuewen Jiang,Hua Hao,Jian Wang,Qinghu Guo,Lin Zhang,Zhonghua Yao,Minghe Cao,Hanxing Liu

DOI: https://doi.org/10.1021/acssuschemeng.1c08121

2022-01-20

Abstract:The trade-off relationship of the polarization and the breakdown strength severely limits the enhancement of energy-storage properties of dielectric materials. In this work, Pb-free 0.92BaTiO3–0.08Bi(Mg1/2Zr1/2)O3 (0.92BT-0.08BMZ) thin films are synthesized via a sol–gel method, in which the coexisting state of an amorphous phase and a crystalline phase is achieved and regulated through changing the annealing temperature. First, Pt/Ti/SiO2/Si is selected as a substrate due to the favorable phase composition and the optimized energy-storage properties, compared to LaNiO3-buffered Si and Nb:SrTiO3 substrates. Second, the evolution from the single amorphous phase to the amorphous/crystalline coexisting phase driven by increasing the annealing temperature is proved by grazing incident X-ray diffraction (GIXRD), high-resolution TEM (HRTEM), and an enhanced dielectric constant for 0.92BT-0.08BMZ thin films. Additionally, the local electric field and the polarization with 0.92BT-0.08BMZ thin films at different annealing temperatures are analyzed based on finite element simulation, revealing that the regulation of the ratio of the nanocrystal phase in the amorphous phase matrix would be effective in enhancing the energy-storage density. Finally, the optimized energy-storage performance is achieved in 0.92BT-0.08BMZ thin films annealed at 600 °C, with a large energy density of 55.2 J/cm3 and a high energy efficiency of 83.6%, demonstrating the great application potential of 0.92BT-0.08BMZ thin films for portable pulse capacitors.

chemistry, multidisciplinary,engineering, chemical,green & sustainable science & technology
Flexible multilayer lead-free film capacitor with high energy storage performances via heterostructure engineering

Ningning Sun,Jinhua Du,Ye Zhao,Chunxiao Lu,Pei Han,Yong Li,Qiwei Zhang,Xihong Hao

DOI: https://doi.org/10.1016/j.jmat.2022.02.007

IF: 8.589

2022-02-01

Journal of Materiomics

Abstract:The immense potential of flexible energy storage materials applied in wearable electronic devices has stimulated a lot of science researches on manufacturing technology and performance optimization. Herein, an all-inorganic flexible ferroelectric film with multilayer heterostructure is prepared based on Mn doped Bi0.5Na0.5TiO3 BiNi0.5Zr0.5O3 (Mn:BNT-BNZ) and Bi0.5Na0.5TiO3 BiZn0.5Zr0.5O3 (BNT-BZZ) relaxor ferroelectrics. A win-win situation of breakdown strength and polarization is achieved in the Mn:BNT-BNZ/BNT-BZZ multilayer film with the stacking period N = 3, of which energy density and efficiency reach 80.4 J/cm3 and 62.0% respectively. It is proposed that the excellent energy storage performances are attributed to the synergistic effect of the electric field amplification effect, interface blocking effect and the polarization coupling effect based on the multilayer heterostructure. Moreover, the flexible ferroelectric film exhibits outstanding temperature (25–205 °C), frequency (0.5–5 kHz) stability and antifatigue property (1 × 108 cycles), and can well maintain stable performance at different tensile/compressive bending radii (10–5 mm) and even after 104 bending cycles with a fixed bending radius of 3 mm. This work opens up a promising route to the development of flexible energy storage materials.

materials science, multidisciplinary,chemistry, physical,physics, applied
BiFeO3–SrTiO3 thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance

Liangliang Li,Haowei Pan,Jing Ma,Y. Zeng,C. Nan,Yang Shen,Yuanhua Lin

DOI: https://doi.org/10.1039/C7TA00665A

2017-03-21

Abstract:Capacitors with high electrostatic energy density, long-term stability, and environmental friendliness are strongly demanded in modern electrical and electronic systems. Here, we obtained a new lead-free relaxor-ferroelectric Mn-doped 0.4BiFeO3–0.6SrTiO3 (BFSTO) thin film capacitor with an ultrahigh energy density of ∼51 J cm−3, which is superior to other lead-free systems and comparable with the best lead-based films. The breakdown strength of the BFSTO film reached ∼3.6 MV cm−1. Besides, the thin film capacitor showed strong fatigue endurance after 2 × 107 cycles and possessed good thermal stability of energy storage performance in a wide temperature range (−40–140 °C). These excellent features should be ascribed to the good epitaxial quality, strong relaxor behavior, and suppressed leakage current of the film. The results prove the great potential of the BFSTO film for electrostatic energy storage. More importantly, our findings could motivate the design and fabrication of a series of BiFeO3-based dielectrics with suppressed leakage currents and high breakdown strength to develop a new kind of lead-free dielectric material with ultrahigh energy storage performance.

Materials Science,Engineering,Physics
BaTiO 3 -based Ferroelectric Thin Film Capacitor on Silicon for Ultra-high Energy Storage Performance at Low Electric Field Strength

Fan Ye,Xin-Gui Tang,Peng-Zu Ge,Yan-Ping Jiang,Qiu-Xiang Liu

DOI: https://doi.org/10.1109/led.2023.3287977

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:In the case of dielectric energy storage devices, excessive pursuit of giant electric fields means greater exposure to high temperatures and insulation damage risk. Ferroelectric thin film devices offer opportunities for energy storage needs under finite electric fields due to their intrinsically large polarization and the advantage of small size. Herein, we designed the capacitor’s dielectric layer by doping barium titanate Ba(1-x)CexTiO3 (BCTO). The addition of highly charged ions Ce3+ induce cell shrinkage thus further optimizing the ferroelectric polarization. Accordingly, the capacitor with Au/BCTO/Au structure integrated directly on silicon substrate showed excellent energy storage performance (Wrec ≈ 92.6 J/cm3 and η ≈ 86.5%) under only 1961 kV/cm. In addition, we significantly increased the electrical breakdown strength from 1726 kV/cm to 3426 kV/cm by adjusting the Ba0.95Ce0.05TiO3 film thickness, thus achieving ultra-high energy storage density (107.9 J/cm3). The results expand the application prospects of silicon-based ferroelectric capacitors for energy storage at low electric field strength.

engineering, electrical & electronic
Antiferroelectric Anisotropy of Epitaxial PbHfO 3 Films for Flexible Energy Storage

Meng‐Fu Tsai,Yun‐Zhe Zheng,Si‐Cheng Lu,Jun‐Ding Zheng,Hao Pan,Chun‐Gang Duan,Pu Yu,Rong Huang,Ying‐Hao Chu

DOI: https://doi.org/10.1002/adfm.202105060

IF: 19

2021-07-28

Advanced Functional Materials

Abstract:Dielectric capacitors are widely studied for power supply systems because they can quickly store and release electrical energy. Among various kinds of dielectric materials, antiferroelectrics show promising features of high energy-storage density and efficiency. In this study, epitaxial antiferroelectric PbHfO3 films with different orientations are fabricated, in which remarkable anisotropies of polarization and energy storage properties are discovered. With the optimization of film orientation, much-improved energy density and excellent high-temperature efficiency are achieved in the PbHfO3 films. Moreover, the PbHfO3 films are fabricated onto flexible mica substrates, which exhibit excellent property robustness against mechanical bending. This study provides a fundamental understanding of the anisotropic antiferroelectric behaviors of epitaxial PbHfO3 films and provides a generalizable pathway for flexible energy-storage dielectric capacitors.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Achieving an ultra-high capacitive energy density in ferroelectric films consisting of superfine columnar nanograins

Yuyao Zhao,Jun Ouyang,Kun Wang,Meiling Yuan,Yiqun Gao,Yu Su,Hongbo Cheng,Menglin Liu,Qian Yang,Wei Pan

DOI: https://doi.org/10.1016/j.ensm.2021.04.010

IF: 20.4

2021-08-01

Energy Storage Materials

Abstract:Well-crystallized perovskite ferroelectric films usually display a bulk-like polarization response (P) under an external electric field (E), i.e., a large P-E hysteresis loop featuring a sizable remnant polarization and an early polarization saturation. Such characteristics are undesirable for capacitive energy storage applications. In this work, we demonstrate an optimal P-E behavior, i.e., a small remnant polarization and a delayed polarization saturation, in perovskite BaTiO3 films consisting of superfine columnar nanograins. In a low-temperature, nucleation-dominated sputtering deposition, an in-situ grown conductive buffer layer promotes the formation of these nanograins, which display a controllable diameter down to ∼10 nm and extend throughout the film thickness. The deterioration of the remnant polarization and its delayed saturation under an electric field, can be attributed to a strong polarization-constraining effect from the densely-packed, non-ferroelectric grain boundaries, which is supported by a phase field modeling simulation. The resulted BaTiO3 film capacitors integrated on Si at 350°C display a high recyclable energy density (Wrec∼135±10 J/cm3) and efficiency (η∼80%±4%) which are thickness-scalable. An intrinsically high power density, a simple and stable chemical composition, and good thermal (-150°C ∼ 170°C) and cycling stabilities (up to ∼ 2 × 108 charge-discharge cycles) warrant a broad range of applications for these film capacitors.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Optimization of polarization behavior enabled by multiscale heterostructure design for excellent energy storage performance in Na0.5Bi0.5TiO3-based relaxor ferroelectric thin film

Huiting Sui,Huajun Sun,Shibing Xiao,Ying Liu,Haitao Wu,Xiaoguang Ma

DOI: https://doi.org/10.1016/j.jpowsour.2023.233354

IF: 9.2

2023-10-01

Journal of Power Sources

Abstract:Dielectric capacitors are promising candidates in the field of pulse power systems due to their ultrafast charge/discharge speed and high power density. A major challenge, however, is to improve the recoverable energy storage density (W rec) and energy storage efficiency (η). In this work, Na0.5Bi0.5(Ti,Fe)O3 (NBFT)-based system is selected and the equivalent circuit of the corresponding capacitors is studied according to the Maxwell's displacement current hypothesis, providing a way of optimizing the polarization behavior by multiscale heterostructure design via adjusting the specific arrangement of layers and interface within the NBFT-based capacitors. By introducing heterogeneous components of (Ba,Sr)TiO3 (BST) and Na0.5Bi0.5(Ti,Zr)O3 (NBZT), abundant heterogeneous interfaces are obtained for NBFT/BSxT and NBFT/NBZT heterostructure thin films. Both the thin films possess superior breakdown strength (E BD) and polarization response (P m–P r) than that of NBFT, which is highly associated with the interfacial resistance, improvement of local component heterogeneity, changes in domain wall motion and Von Mises stress/strain distribution. Notably, the energy storage performance is modulated for NBFT/NBZT with enhanced relaxor ferroelectricity as the heterogeneous interface is increased with W rec and η of 66.57 J/cm3 and 64.33%, respectively. These findings prove effective ways of optimizing NBT-based relaxor ferroelectric thin film for energy storage devices.

energy & fuels,materials science, multidisciplinary,electrochemistry,chemistry, physical
Flexible HfxZr1-xO2 thin films on polyimide for energy storage with high flexibility

Yuting Chen,Yang Yang,Peng Yuan,Pengfei Jiang,Yannan Xu,Shuxian Lv,Yaxin Ding,Zhiwei Dang,Tiancheng Gong,Yan Wang,Qing Luo

DOI: https://doi.org/10.1109/led.2022.3171273

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:Flexible energy-storage capacitor has attrac- ted great interest on account of the rapid development of the combination of intelligent systems and flexible electronics. In this work, we fabricated flexible energy-storage capacitors by depositing HfxZr1-xO2 thin films on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible capacitors exhibit high energy storage density (ESD $approx 35.4$ J/cm3) and efficiency ($eta approx 69.3$ %). Furthermore, ESD and $eta $ remained stable even bending 5000 cycles with a radius of 2 mm. This work provide reference for the development of high-performance flexible HfO2-based energy storage devices.

engineering, electrical & electronic
Remarkable Energy Storage Performance of BiFeO3-based High-Entropy Lead-Free Ceramics and Multilayers

Hongtian Li,Xu Li,Yuxiao Du,Xiaoxin Chen,Hailan Qin,Yasemin Tabak,Atilla Evcin,Fayaz Hussain,Kaixin Song,Huanfu Zhou,Jianwei Zhao,Dawei Wang

DOI: https://doi.org/10.1016/j.cej.2024.156112

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Electrostatic energy storage capacitors featuring fast charge-discharge capability play an indispensable role in pulsed power capacitors. However, the inverse correlation between polarization and dielectric breakdown strength (E-b) is the main obstacle limiting the access to high recoverable energy storage density (Wrec) W rec ) and high efficiency (7). In this work, we designed a series of novel (1- x )BiFeO (3- x )(Ba (0.2) S r(0.2) Ca- 0.2 Bi (0.2) Na (0.2) )TiO (3) (BFx BSCBNT, x = 0.4-1.0) high-entropy lead-free relaxor ferroelectric ceramics. The synergy of refined grain size, broadened band gap, and core-shell microstructure is well-investigated by experimental results and phase-field simulations. High polarization difference is achieved by the strengthened relaxation behavior and the dominated polar nanoregions (PNRs). Both high W rec of 6.0 J/cm(3) and 7 of 81.1 % are achieved in the BF-0.8BSCBNT ceramics. In particular, a remarkable W rec of 12.1 J/cm3 3 with a 7 of 86.1 % are obtained in the multilayer ceramic capacitors (MLCCs) fabricated from the x = 0.8 composition. Excellent temperature stability (<4.0 % in the range of 25-140 degrees C) and frequency stability (<6.2 % in the range of 1-500 Hz) are also achieved in MLCCs. The excellent energy storage performance demonstrates that high-entropy strategy is effective to develop novel lead-fee ceramics and devices for energy storage applications.
Excellent energy storage performance of Mn-doped SrTiO3-BiFeO3 thin films by microstructure modulation

Boying Wang,Hao Wang,Jiantao Wang,Chaolong Li,Feng Wang,Chunli Diao,Haiwu Zheng

DOI: https://doi.org/10.1016/j.jallcom.2023.171756

IF: 6.2

2023-12-01

Journal of Alloys and Compounds

Abstract:Dielectric thin film capacitors are expected to be a promising candidate for high-performance energy storage devices due to their high power density, fast charge/discharge speed, and excellent stability. Nevertheless, it remains a challenging endeavor to develop dielectrics with excellent energy storage density comparable to that of commercial batteries. In this work, lead-free 0.8SrTiO3-0.2BiFeO3 (0.8STO-0.2BFO) thin films with coexisting amorphous and nanocrystalline structure were prepared by a sol-gel method. The heat-treatment temperature was adjusted to form polar-nano regions, thereby modulate the breakdown strength and dielectric polarization, and increase the energy storage density. The electric potential, electric field, and current density of the films with different amorphous/crystalline volume fractions were evaluated by the finite element simulation to further verify that the proper crystallization can result in the improved polarization performance and increased breakdown strength of the films, which are beneficial to the enhancement of energy storage performance. Through structural tailoring, the 0.8STO-0.2BFO film annealed at 550 °C demonstrates the optimal energy storage properties with a giant discharge energy storage density of 65 J/cm3 and high efficiency of 75% at room temperature. Simultaneously, a broad temperature stability (20–160 °C), superb operating frequency stability (20 Hz-2 kHz), and excellent fatigue endurance (6.3 ×105) are observed without appreciable degradation of the energy storage performance. The excellent energy storage performance indicates a widespread potential of 0.8STO-0.2BFO films in pulse power applications, such as consumer electronics, microelectronics, and medical devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering

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