Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility
Yuting Chen,Yang Yang,Peng Yuan,Pengfei Jiang,Yuan Wang,Yannan Xu,Shuxian Lv,Yaxin Ding,Zhiwei Dang,Zhaomeng Gao,Tiancheng Gong,Yan Wang,Qing Luo
DOI: https://doi.org/10.1007/s12274-021-3896-8
IF: 9.9
2021-11-12
Nano Research
Abstract:Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (Pr) of 21 µC/cm2. Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology